基于类表面等离激元极化激元的宽带基片集成波导芯片滤波器

Wideband Substrate Integrated Waveguide Chip Filter Using Spoof Surface Plasmon Polariton.

作者信息

Pan Dongzhe, You Bin, Wen Xuan, Li Xungen

机构信息

The Key Laboratory of RF Circuits and Systems of Ministry of Education, Microelectronics CAD Center, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.

The School of Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.

出版信息

Micromachines (Basel). 2022 Jul 28;13(8):1195. doi: 10.3390/mi13081195.

DOI:10.3390/mi13081195

PMID:36014117

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9416643/

Abstract

This article presents a novel wideband bandpass filter based on the integration of a substrate integrated waveguide (SIW) and a spoof surface plasmon polariton (SSPP). An SIW cavity with periodic arrays of meander-slot units is etched on the top metallic layer to achieve the characteristics of a multi-order filter with good performance. The passbands can be flexibly selected by varying the geometric parameters of the SIW and SSPP to adjust the lower and upper sidebands independently. Using a redistribution layer (RDL) process, a novel 3D capacitive interconnection called a through-dielectric capacitor (TDC) is proposed and collaboratively designed with an interdigital capacitor to achieve capacitive source-load cross-coupling. The proposed filter has a center frequency of 60 GHz, with a wide 3-dB fractional bandwidth of about 45.8%. The improved simulated sideband suppression has a 30 dB rejection at 40 GHz and 75.4 GHz, corresponding to a 30-dB rectangular coefficient of 1.28.

摘要

本文提出了一种基于基片集成波导（SIW）和类表面等离子体激元（SSPP）集成的新型宽带带通滤波器。在顶部金属层上蚀刻具有周期性曲折槽单元阵列的SIW腔，以实现具有良好性能的多阶滤波器特性。通过改变SIW和SSPP的几何参数，可以灵活选择通带，从而独立调整下边带和上边带。利用再分布层（RDL）工艺，提出了一种名为穿介质电容器（TDC）的新型三维电容互连，并与叉指电容器协同设计，以实现电容性源-负载交叉耦合。所提出的滤波器中心频率为60 GHz，3 dB分数带宽约为45.8%。改进后的模拟边带抑制在40 GHz和75.4 GHz处有30 dB的抑制，对应的30 dB矩形系数为1.28。