Institute of Physics, University of Sindh, Jamshoro, Sindh, Pakistan.
Institute of Physics, University of Sindh, Jamshoro, Sindh, Pakistan.
Spectrochim Acta A Mol Biomol Spectrosc. 2019 Dec 5;223:117374. doi: 10.1016/j.saa.2019.117374. Epub 2019 Jul 9.
The laser induced breakdown optical emission spectroscopy technique has been employed for the analysis of silicon sample in the atmospheric air. Laser irradiance of 1 × 10 Wcm was created on specimen of silicon sample surface to generate the plasma plume by using the fundamental of Nd:YAG laser pulse. This laser produced silicon plasma was captured through the LIBS 2000 Spectrometer for the subsequent analysis of silicon sample. The electron temperature of silicon plasma is estimated to be 7500 K to 4000 K while electron number density of silicon plasma lies 3.2 × 10 to 1.8 × 10. In spatially resolved laser induced plasma and this temperature of silicon plasma has been estimated from the Boltzmann plot method to be in local thermodynamic equilibrium, and electron number density of silicon plasma has been estimated from the Stark width broadening at λ ~ 288.1 nm respectively. Observed result in spatially resolved laser plasma which shows the recombination rate of plasma plume along the direction of expansion. Which also affects on the temperature and density of silicon plasma besides the intensity decreasing factor with distance in silicon ionic and neutrals transition lines is discussed.
激光诱导击穿光谱技术已被用于分析大气环境中的硅样品。通过使用 Nd:YAG 激光脉冲的原理，在硅样品表面的样品上产生 1×10 Wcm 的激光辐照度，以产生等离子体羽流。通过 LIBS 2000 光谱仪捕获这种激光产生的硅等离子体，以便对硅样品进行后续分析。硅等离子体的电子温度估计为 7500K 至 4000K，而硅等离子体的电子数密度则在 3.2×10 到 1.8×10 之间。在空间分辨激光诱导等离子体中，通过玻尔兹曼图法估计硅等离子体的温度处于局部热力学平衡状态，而通过 λ~288.1nm 的斯塔克展宽估计硅等离子体的电子数密度。空间分辨激光等离子体的观测结果显示了等离子体羽流在膨胀方向上的复合速率。这除了讨论硅离子和中性跃迁线中随距离强度降低的因素外，还影响硅等离子体的温度和密度。
