Zhang He, Wang Yaogong, Wang Ruozheng, Zhang Xiaoning, Liu Chunliang
Key Laboratory of Physical Electronics and Devices, Xi'an Jiaotong University, Ministry of Education, Xi'an 710049, China.
School of Electronic and Information Engineering, Xi'an 710049, China.
Materials (Basel). 2019 Jul 18;12(14):2300. doi: 10.3390/ma12142300.
To improve the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs), in this thesis, Cs ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs ion concentrations were investigated in our work. When the Cs ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm V s, the OFF current of 0.8 × 10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s.
为了提高非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）的性能，本文通过低温溶液浸渍法制备了铯离子吸附的IGZO（Cs-IGZO）薄膜。在a-IGZO薄膜的表面结构和氧空位浓度的改性作用下，随着铯离子有效引入到a-IGZO薄膜表面，a-IGZO TFT的转移特性和稳定性得到了极大改善。我们的工作研究了铯离子浓度的不同参数。当铯离子浓度达到2%摩尔/升时，获得了性能优化的Cs-IGZO TFT，其载流子迁移率为18.7厘米²/伏·秒，关态电流为0.8×10⁻¹²安，阈值电压为0.2伏，在5000秒的正偏压应力下阈值电压偏移为1.3伏。
