Kia Alireza M, Haufe Nora, Esmaeili Sajjad, Mart Clemens, Utriainen Mikko, Puurunen Riikka L, Weinreich Wenke
Fraunhofer Institute for Photonic Microsystems, 01099 Dresden, Germany.
VTT Technical Research Centre of Finland Ltd., 02044 Espoo, Finland.
Nanomaterials (Basel). 2019 Jul 19;9(7):1035. doi: 10.3390/nano9071035.
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample's surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO thin films.
对于具有高纵横比（HAR）结构的薄膜分析，与其他常用技术（如电子显微镜）相比，飞行时间二次离子质谱（ToF-SIMS）克服了几个挑战。本文介绍的研究聚焦于代表不同半导体技术的两种不同类型的HAR结构。在第一项研究中，ToF-SIMS用于说明在铜电镀前后，大型硅通孔（TSV）内的铜电解质对钴籽晶层的腐蚀情况。然而，由于样品的表面形貌，受几何阴影效应影响，ToF-SIMS分析被证明具有难度。此后，在第二项研究中，我们引入了一个新的测试平台以消除HAR结构带来的困难，并再次使用ToF-SIMS进行元素分析。我们将三维ToF-SIMS分析的数据图像切片与横向HAR测试芯片（PillarHall™）相结合，以研究原子层沉积（ALD）HfO薄膜中硅掺杂剂浓度的均匀性。
