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通过二胺界面修饰提高钙钛矿发光二极管的性能

Enhanced Performance of Perovskite Light-Emitting Diodes via Diamine Interface Modification.

作者信息

Tang Lianqi, Qiu Jingjing, Wei Qi, Gu Hao, Du Bin, Du Haiyan, Hui Wei, Xia Yingdong, Chen Yonghua, Huang Wei

机构信息

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China.

Shaanxi Institute of Flexible Electronics (SIFE) , Northwestern Polytechnical University (NPU) , 127 West Youyi Road , Xi'an 710072 , China.

出版信息

ACS Appl Mater Interfaces. 2019 Aug 14;11(32):29132-29138. doi: 10.1021/acsami.9b11866. Epub 2019 Aug 2.

DOI:10.1021/acsami.9b11866
PMID:31333010
Abstract

Interfacial engineering between charge transport layers and perovskite light-emitting layers has been applied as an effective strategy to enhance performance of perovskite light-emitting diodes (PeLEDs). Herein, we introduce a Lewis base diamine molecule [2,2-(ethylenedioxy)bis(ethylammonium), EDBE] to modify the interface between the ZnMgO electron transport layer (ETL) and perovskite light-emitting layer in PeLEDs. With two amino groups in EDBE, one amine can interact with ZnMgO beneath to tune the growth of perovskite films, resulting in improved electron injection and suppressed current leakage. Meanwhile, the other amine can passivate the surface trap states of the polycrystalline perovskite films, which would eliminate trap-mediated nonradiative recombination. An enhanced performance for near-infrared PeLEDs is achieved with external quantum efficiency from 9.15 to 12.35% after incorporating the EDBE interfacial layer. This work demonstrated that the introduction of Lewis base diamine molecules as the ETL/perovskite interfacial agent is a promising way for developing high-performance PeLEDs.

摘要

电荷传输层与钙钛矿发光层之间的界面工程已被用作提高钙钛矿发光二极管(PeLED)性能的有效策略。在此,我们引入一种路易斯碱二胺分子[2,2 -(乙二氧基)双(乙铵),EDBE]来修饰PeLED中ZnMgO电子传输层(ETL)与钙钛矿发光层之间的界面。由于EDBE中有两个氨基,一个胺可以与下方的ZnMgO相互作用以调节钙钛矿薄膜的生长,从而改善电子注入并抑制电流泄漏。同时,另一个胺可以钝化多晶钙钛矿薄膜的表面陷阱态,这将消除陷阱介导的非辐射复合。在引入EDBE界面层后,近红外PeLED的性能得到增强,外量子效率从9.15%提高到12.35%。这项工作表明,引入路易斯碱二胺分子作为ETL/钙钛矿界面剂是开发高性能PeLED的一种有前途的方法。

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