用于有机发光二极管柔性封装的硅基堆叠层沉积
Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes.
作者信息
Hsu Chia-Hsun, Lin Yang-Shih, Wu Hsin-Yu, Zhang Xiao-Ying, Wu Wan-Yu, Lien Shui-Yang, Wuu Dong-Sing, Jiang Yeu-Long
机构信息
School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
出版信息
Nanomaterials (Basel). 2019 Jul 23;9(7):1053. doi: 10.3390/nano9071053.
In this study, inorganic silicon oxide (SiO)/organic silicon (SiCH) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiO and SiCH layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiO and SiCH were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiO/SiCH were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiO/SiCH exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.
在本研究中，通过射频感应耦合等离子体化学气相沉积系统沉积无机氧化硅（SiO）/有机硅（SiCH）堆叠层，作为有机发光二极管（OLED）的气体扩散阻挡层。研究了SiO层和SiCH层厚度对水蒸气透过率（WVTR）和残余应力的影响，以评估封装能力。实验结果表明，当SiO层和SiCH层的厚度分别为300nm和30nm时，WVTR和残余应力最低。最后，将不同数量的SiO/SiCH堆叠对应用于OLED封装。用六对SiO/SiCH封装的OLED具有低开启电压和低串联电阻，器件寿命从7小时增加到2000多小时。
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