Highly Sensitive, Fast Graphene Photodetector with Responsivity >10 A/W Using a Floating Quantum Well Gate.

Graphene, owing to its zero-band-gap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption-based detectors inherently suffer from poor responsivity because of weak absorption and fast photocarrier recombination, limiting their viability for low-intensity light detection. Here, we use a graphene/WS/MoS vertical heterojunction to demonstrate a highly sensitive photodetector, where the graphene layer serves dual purposes, namely, as the light absorption layer and also as the carrier conduction channel, thus maintaining the broadband nature of the photodetector. A fraction of the photoelectrons in graphene encounter ultrafast interlayer transfer to a floating monolayer MoS quantum well, providing a strong quantum-confined photogating effect. The photodetector shows a responsivity of 4.4 × 10 A/W at 30 fW incident power, outperforming photodetectors reported till date where graphene is used as a light absorption material by several orders. In addition, the proposed photodetector exhibits an extremely low noise equivalent power of <4 fW/ and a fast response (∼milliseconds) with zero reminiscent photocurrent. The findings are attractive toward the demonstration of a graphene-based highly sensitive, fast, broadband photodetection technology.