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基于二硫化钼(MoS)的光电探测器综述:从超宽带、自供电到柔性器件

A review of molybdenum disulfide (MoS) based photodetectors: from ultra-broadband, self-powered to flexible devices.

作者信息

Nalwa Hari Singh

机构信息

Advanced Technology Research 26650 The Old Road Valencia California 91381 USA

出版信息

RSC Adv. 2020 Aug 19;10(51):30529-30602. doi: 10.1039/d0ra03183f. eCollection 2020 Aug 17.

Abstract

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS can be significantly improved by boosting its charge carrier mobility and incident light absorption forming MoS based plasmonic nanostructures, halide perovskites-MoS heterostructures, 2D-0D MoS/quantum dots (QDs) and 2D-2D MoS hybrid vdWHs, chemical doping, and surface functionalization of MoS atomic layers. By utilizing these different integration strategies, MoS hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W up to 10 A W, detectivity from 10 to 10 Jones and a photoresponse time from seconds (s) to nanoseconds (10 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS and other 2D TMD-based photodetectors.

摘要

二维过渡金属二硫属化物(2D TMDs)因其可调节的带隙、与光的强相互作用以及与其他材料构建多种范德华异质结构(vdWHs)的巨大潜力,在光电子领域备受关注。具有高载流子迁移率和光学透明度的二硫化钼(MoS)原子层非常适合用于开发从监控、医疗保健到光通信等领域的超宽带光电探测器。本综述简要介绍了基于TMD的光电探测器,特别聚焦于基于MoS的光电探测器。当前的研究进展表明,通过提高其电荷载流子迁移率和入射光吸收,形成基于MoS的等离子体纳米结构、卤化物钙钛矿-MoS异质结构、2D-0D MoS/量子点(QDs)和2D-2D MoS混合vdWHs、化学掺杂以及MoS原子层的表面功能化,可以显著提高原子层MoS的光响应。通过利用这些不同的集成策略,基于MoS混合异质结构的光电探测器表现出极高的光响应度,范围从mA W到10 A W,探测率从10到10 Jones,光响应时间从秒(s)到纳秒(10 s),从深紫外(DUV)到长波长红外(LWIR)区域变化了几个数量级。还讨论了由基于MoS的混合异质结构与石墨烯、碳纳米管(CNTs)、TMDs和ZnO开发的柔性光电探测器。此外,还总结了应变诱导和自供电的基于MoS的光电探测器。从光响应度、探测率、响应速度和量子效率以及它们的测量波长和入射激光功率密度等方面分析了影响各种基于MoS的光电探测器品质因数的因素。还概述了基于MoS和其他2D TMD的光电探测器的结论和未来发展方向。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7634/9056353/abaf65dea0e6/d0ra03183f-f1.jpg

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