Chen Xi, Chen Xinwei, Han Yutong, Su Chen, Zeng Min, Hu Nantao, Su Yanjie, Zhou Zhihua, Wei Hao, Yang Zhi
Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Center of Hydrogen Science, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
Nanotechnology. 2019 Nov 1;30(44):445503. doi: 10.1088/1361-6528/ab35ec.
Molybdenum selenide (MoSe) has drawn significant interest due to its typical semiconductor properties. MoSe is a relatively novel material in the field of gas sensors especially at room temperature. Herein, we utilize a facile and efficient synthetic method of liquid-phase exfoliation to exfoliate bulk MoSe into nanosheets. Anhydrous ethanol is used as dispersant, so the low boiling point makes it easy to be removed from MoSe nanosheets, which does not affect the subsequent sensing performance. The exfoliated few-layered MoSe nanosheets shows significantly enhanced NO gas response (1500% to 10 ppm NO which is 18 times greater than pristine bulk MoSe), a low detection concentration (50 ppb), an outstanding repeatability, a remarkable selectivity, and a reliable long-term device durability (more than 60 d) at room temperature (25 °C). The reason of the significant improvement in gas sensing performance can be attributed mainly to the higher surface-to-volume ratio of exfoliated MoSe nanosheets. It promotes the adsorption of gas molecules on the surface of the material, thereby facilitating the charge transfer process. The superior performance of this gas sensor makes MoSe nanosheets a potential candidate for room temperature NO detection.
硒化钼(MoSe)因其典型的半导体特性而备受关注。MoSe在气体传感器领域是一种相对新颖的材料,尤其是在室温下。在此,我们采用一种简便高效的液相剥离合成方法,将块状MoSe剥离成纳米片。使用无水乙醇作为分散剂,其低沸点使其易于从MoSe纳米片中去除,且不会影响后续的传感性能。剥离后的少层MoSe纳米片在室温(25°C)下对NO气体表现出显著增强的响应(对10 ppm NO的响应为1500%,比原始块状MoSe大18倍)、低检测浓度(50 ppb)、出色的重复性、显著的选择性以及可靠的长期器件耐久性(超过60天)。气体传感性能显著提高的原因主要可归因于剥离后的MoSe纳米片具有更高的表面积与体积比。这促进了气体分子在材料表面的吸附,从而有利于电荷转移过程。这种气体传感器的优异性能使MoSe纳米片成为室温下NO检测的潜在候选材料。