基于半导体增益芯片和扩展氮化硅布拉格光栅的超窄线宽激光器。

Ultra-narrow linewidth laser based on a semiconductor gain chip and extended SiN Bragg grating.

作者信息

Xiang Chao, Morton Paul A, Bowers John E

出版信息

Opt Lett. 2019 Aug 1;44(15):3825-3828. doi: 10.1364/OL.44.003825.

DOI:10.1364/OL.44.003825

Abstract

We demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.

摘要

我们展示了由半导体增益芯片和扩展氮化硅布拉格光栅组成的超窄线宽固定波长混合激光器。制造的超低κ布拉格光栅提供了窄带宽和高旁瓣抑制比。展示了一种单波长1544 nm混合扩展分布式布拉格反射器激光器，其输出功率为24 mW，洛伦兹线宽为320 Hz，为片上和片外应用提供了高性能光源。