Zhao Lei, Yang Xiao, Niu Qinglin, He Zhihong, Dong Shikui
Opt Lett. 2019 Aug 1;44(15):3885-3888. doi: 10.1364/OL.44.003885.
The bandwidths of thermal-tunable metamaterial perfect absorbers (MPAs) based on the phase change materials such as GeSbTe and VO are usually hundreds of nanometers at near-infrared frequency. Amorphous silicon (a-Si) provides the approach to achieve linearly thermal-tunable ultra-narrowband MPAs, if the absorption band is narrow enough. Four-nanorod-coupled a-Si resonators are proposed in this Letter. An absorption band at 1064 nm is obtained with ultra-narrow bandwidth (FWHM) only 1.4 nm by exciting the coupled magnetic dipole (CMD) mode, which exhibits great linearity to the temperature. In addition, the thermo-optical sensitivity (S=Δλ/ΔT) is about 0.08 nm/°C. The figure of merit of the thermal tunability performance FOM=S/FWHM=0.06. As a modulator, the critical temperature of absorptivity at 1064 nm is only 40°C, which is much lower than the GeSbTe (GST) and VO. In addition, the modulation depth is up to 82% at near-infrared frequency.
基于诸如锗锑碲(GeSbTe)和氧化钒(VO)等相变材料的热调谐超材料完美吸收体(MPA)在近红外频率下的带宽通常为数百纳米。如果吸收带足够窄,非晶硅(a-Si)提供了实现线性热调谐超窄带MPA的方法。在本信函中提出了四纳米棒耦合的a-Si谐振器。通过激发耦合磁偶极子(CMD)模式,在1064纳米处获得了带宽极窄(半高宽,FWHM)仅为1.4纳米的吸收带,该吸收带对温度表现出极大的线性度。此外,热光灵敏度(S =Δλ/ΔT)约为0.08纳米/°C。热调谐性能的品质因数FOM = S/FWHM = 0.06。作为调制器,在1064纳米处吸收率的临界温度仅为40°C,远低于锗锑碲(GST)和氧化钒(VO)。此外,在近红外频率下调制深度高达82%。