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基于四纳米棒耦合非晶硅谐振器的具有低功耗和大调制深度的线性热可调近红外超窄带超材料完美吸收器。

Linearly thermal-tunable near-infrared ultra-narrowband metamaterial perfect absorber with low power and a large modulation depth based on a four-nanorod-coupled a-silicon resonator.

作者信息

Zhao Lei, Yang Xiao, Niu Qinglin, He Zhihong, Dong Shikui

出版信息

Opt Lett. 2019 Aug 1;44(15):3885-3888. doi: 10.1364/OL.44.003885.

Abstract

The bandwidths of thermal-tunable metamaterial perfect absorbers (MPAs) based on the phase change materials such as GeSbTe and VO are usually hundreds of nanometers at near-infrared frequency. Amorphous silicon (a-Si) provides the approach to achieve linearly thermal-tunable ultra-narrowband MPAs, if the absorption band is narrow enough. Four-nanorod-coupled a-Si resonators are proposed in this Letter. An absorption band at 1064 nm is obtained with ultra-narrow bandwidth (FWHM) only 1.4 nm by exciting the coupled magnetic dipole (CMD) mode, which exhibits great linearity to the temperature. In addition, the thermo-optical sensitivity (S=Δλ/ΔT) is about 0.08 nm/°C. The figure of merit of the thermal tunability performance FOM=S/FWHM=0.06. As a modulator, the critical temperature of absorptivity at 1064 nm is only 40°C, which is much lower than the GeSbTe (GST) and VO. In addition, the modulation depth is up to 82% at near-infrared frequency.

摘要

基于诸如锗锑碲(GeSbTe)和氧化钒(VO)等相变材料的热调谐超材料完美吸收体(MPA)在近红外频率下的带宽通常为数百纳米。如果吸收带足够窄,非晶硅(a-Si)提供了实现线性热调谐超窄带MPA的方法。在本信函中提出了四纳米棒耦合的a-Si谐振器。通过激发耦合磁偶极子(CMD)模式,在1064纳米处获得了带宽极窄(半高宽,FWHM)仅为1.4纳米的吸收带,该吸收带对温度表现出极大的线性度。此外,热光灵敏度(S =Δλ/ΔT)约为0.08纳米/°C。热调谐性能的品质因数FOM = S/FWHM = 0.06。作为调制器,在1064纳米处吸收率的临界温度仅为40°C,远低于锗锑碲(GST)和氧化钒(VO)。此外,在近红外频率下调制深度高达82%。

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