Campbell Quinn, Dabo Ismaila
Department of Materials Science and Engineering, Materials Research Institute, and Penn State Institutes of Energy and the Environment, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
J Chem Phys. 2019 Jul 28;151(4):044109. doi: 10.1063/1.5093810.
We study the factors that affect the photoactivity of silicon electrodes for the water-splitting reaction using a self-consistent continuum solvation model of the solid-liquid interface. This model allows us to calculate the charge-voltage response, Schottky barriers, and surface stability of different terminations while accounting for the interactions between the charge-pinning centers at the surface and the depletion region of the semiconductor. We predict that the most stable oxidized surface does not have a favorable Schottky barrier, which further explains the low solar-to-hydrogen performance of passivated silicon electrodes.
我们使用固液界面的自洽连续溶剂化模型,研究了影响用于水分解反应的硅电极光活性的因素。该模型使我们能够计算不同终端的电荷 - 电压响应、肖特基势垒和表面稳定性,同时考虑表面电荷钉扎中心与半导体耗尽区之间的相互作用。我们预测,最稳定的氧化表面不具有有利的肖特基势垒,这进一步解释了钝化硅电极低的太阳能到氢能转换性能。