Arumugam J, Suresh N, Selvapandiyan M, Sudhakar S, Prasath M
Department of Physics, Periyar University PG Extension Centre, Dharmapuri, 636 705, Tamil Nadu, India.
Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai, 636 902, Tamil Nadu, India.
Heliyon. 2019 Jul 19;5(7):e01988. doi: 10.1016/j.heliyon.2019.e01988. eCollection 2019 Jul.
Single crystals of pure and NaCl doped sulphamic acid (SA) were grown by slow evaporation method at room temperature. The lattice parameters and structure were determined by using single crystal and powder X-ray diffraction analyses. The presence of dopant in the SA lattice was affirmed by EDAX analysis. UV-Vis spectra show maximum transmittance in the visible region. The band gap energies were found to be 6.06 eV and 5.70 eV for pure and NaCl doped SA crystals respectively. From the PL specta the emission were observed at 335 and 424 nm for pure and 340 and 428 nm for doped SA crystal. The thermal stability of the grown crystals were analyzed by thermogravimetric and differential thermal analysis (TGA/DTA) and revealed that the grown crystals were thermally stable up to 331 °C and 334 °C for pure and NaCl doped SA. Vickers microhardness study reveals that the hardness of the crystals is increase with increasing load. The photoconductivity study shows that the grown crystals are negative photoconductive nature. The Laser Damage Threshold (LDT) indicates the grown crystals have good resistance to laser radiation than a standard Potassium dihydrogen phosphate (KDP) crystal. The Z-scan technique was employed to determine the nonlinear refractive index, nonlinear optical absorption and third order nonlinear optical (TONLO) susceptibility of the grown crystals using He-Ne laser.
通过室温缓慢蒸发法生长了纯的和掺杂氯化钠的氨基磺酸(SA)单晶。利用单晶和粉末X射线衍射分析确定了晶格参数和结构。通过能谱分析(EDAX)证实了SA晶格中掺杂剂的存在。紫外-可见光谱显示在可见光区域有最大透过率。发现纯SA晶体和掺杂氯化钠的SA晶体的带隙能量分别为6.06 eV和5.70 eV。从光致发光光谱中观察到,纯SA晶体在335和424 nm处有发射,掺杂SA晶体在340和428 nm处有发射。通过热重分析和差示热分析(TGA/DTA)对生长晶体的热稳定性进行了分析,结果表明,纯SA晶体和掺杂氯化钠的SA晶体分别在331℃和334℃以下热稳定。维氏显微硬度研究表明,晶体硬度随负载增加而增加。光电导率研究表明,生长的晶体具有负光电导性质。激光损伤阈值(LDT)表明,生长的晶体比标准磷酸二氢钾(KDP)晶体对激光辐射具有更好的抗性。采用Z扫描技术,用氦氖激光测定了生长晶体的非线性折射率、非线性光吸收和三阶非线性光学(TONLO)极化率。