Molaei Masoumeh, Mousavi-Khoshdel S Morteza, Ghiasi Mina
Industrial Electrochemical Research Laboratory, Department of Chemistry, Iran University of Science and Technology, P.O. Box: 16846-13114, Tehran, Iran.
Department of Chemistry, Faculty of Physics & Chemistry, Alzahra University, 19835-389, Vanak, Tehran, Iran.
J Mol Model. 2019 Aug 2;25(8):256. doi: 10.1007/s00894-019-4109-1.
The suitability of P-doped g-CN for sodium storage was assessed using density functional theory. The electronic structure of P-doped g-CN was calculated and the results indicate that the presence of the P atom causes the band gap of g-CN to narrow. Na adsorption on a P-g-CN sheet was investigated. Projected density of states (PDOS) analysis revealed that pyridinic nitrogen atoms in g-CN play the main role in Na adsorption. High binding energies were calculated for Na storage on g-CN, leading to a high voltage range (1-3 V) and a high Na diffusion barrier (2.3 eV). Doping the substrate with more P atoms resulted in lower voltages (below 2.2 V), easier Na diffusion (with a barrier of 1.2 eV), and therefore a material that was better suited than g-CN for use in anodes.
采用密度泛函理论评估了P掺杂g-CN用于储钠的适用性。计算了P掺杂g-CN的电子结构,结果表明P原子的存在导致g-CN的带隙变窄。研究了Na在P-g-CN片材上的吸附。态密度投影(PDOS)分析表明,g-CN中的吡啶氮原子在Na吸附中起主要作用。计算得出g-CN上储钠的结合能较高,导致高电压范围(1-3V)和高Na扩散势垒(2.3eV)。用更多的P原子掺杂衬底会导致更低的电压(低于2.2V)、更容易的Na扩散(势垒为1.2eV),因此得到一种比g-CN更适合用于阳极的材料。