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高效单组分有机发光晶体管。

High-Efficiency Single-Component Organic Light-Emitting Transistors.

机构信息

Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.

University of Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Adv Mater. 2019 Sep;31(37):e1903175. doi: 10.1002/adma.201903175. Epub 2019 Aug 5.

DOI:10.1002/adma.201903175
PMID:31379034
Abstract

Construction of high-performance organic light-emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6-diphenylanthracene (DPA) and 2,6-di(2-naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high-quality DPA and dNaAnt single crystals as active layers, high-efficiency single-component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p- and n- conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA-OLETs and 1.75% for dNaAnt-based OLETs, respectively, which are the highest EQE values for single-component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m with current densities up to 1.3 and 8.4 kA cm are also achieved for DPA- and dNaAnt-based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next-generation rapid development of high-performance single-component OLETs and their related organic integrated electro-optical devices.

摘要

由于理想的有机半导体材料有限,高性能有机发光晶体管(OLETs)的构建仍然具有挑战性。在这里,我们引入了两种卓越的高迁移率发射有机半导体材料,即 2,6-二苯基蒽(DPA)和 2,6-二(2-萘基)蒽(dNaAnt),用于构建 OLETs。通过优化器件几何形状以实现平衡的双极性有效电荷输运,并使用高质量的 DPA 和 dNaAnt 单晶作为有源层,我们成功地制造了高效的单组分 OLETs,展示了在 p 型和 n 型导电通道内的强且空间可控的光发射,并输出了高外量子效率(EQE)。在当前器件中获得的 EQE 值分别为 DPA-OLETs 的 1.61%和基于 dNaAnt 的 OLETs 的 1.75%,这是迄今为止在常见器件配置中报告的单组分 OLETs 的最高 EQE 值。此外,基于 DPA 和 dNaAnt 的 OLETs 的亮度分别高达 1210 cd/m 和 3180 cd/m,电流密度分别高达 1.3 kA/cm 和 8.4 kA/cm。这些结果表明,高迁移率发射有机半导体在下一代高性能单组分 OLETs 及其相关有机集成光电设备的快速发展中具有巨大的应用潜力。

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