Kim Dongwan, Leem Jae-Young
Department of Nanoscience and Engineering, Inje University, 197, Inje-ro, Gimhae-si, Gyeongsangnam-do 621-749, Republic of Korea.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):298-303. doi: 10.1166/jnn.2020.17252.
This study proposes a simple and low-cost method of improving the photoresponse properties of ZnO nanorods by selecting optimal seed layer type and precursor concentration, which are parameters significantly influencing growth rate and morphology.When 0.025 M aqueous precursor solution was used, the obtained ZnO nanorods exhibited an improved vertical orientation and growth rate, showing directional growth along the (002) plane, as confirmed by field emission scanning electron microscopy. Moreover, ZnO nanorods (NR1) obtained on the seed layer prepared by oxidation of Zn films exhibited the faster growth rate than those (NR2) synthesized on the seed layer prepared by spin-coating method due to having access to a sufficient amount of Zn ions. The ZnO nanorods obtained at a precursor concentration of 0.025 M exhibited the highest photocurrent, dark current, and photoresponsivity, with the photoresponsivity and photosensitivity of ZnO NR1 exceeding those of ZnO NR2, owing to the larger surface area.
本研究提出了一种简单且低成本的方法,即通过选择最佳的种子层类型和前驱体浓度来改善ZnO纳米棒的光响应特性,这两个参数对生长速率和形态有显著影响。当使用0.025 M的水性前驱体溶液时,所获得的ZnO纳米棒呈现出改善的垂直取向和生长速率,沿(002)面呈现定向生长,这通过场发射扫描电子显微镜得到证实。此外,在通过Zn膜氧化制备的种子层上获得的ZnO纳米棒(NR1)比在通过旋涂法制备的种子层上合成的那些(NR2)具有更快的生长速率,这是因为能够获得足够量的Zn离子。在前驱体浓度为0.025 M时获得的ZnO纳米棒表现出最高的光电流、暗电流和光响应度,由于表面积较大,ZnO NR1的光响应度和光敏性超过了ZnO NR2。