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水热生长 ZnO 纳米棒的晶种层结晶质量对光响应性能的作用。

Role of Seed Layer Crystalline Quality in Photoresponse Performance of Hydrothermally Grown ZnO Nanorods.

机构信息

Division of Electronics and Electrical Engineering, Dongguk University, Seoul 100-715, Korea.

出版信息

Int J Mol Sci. 2022 Aug 23;23(17):9541. doi: 10.3390/ijms23179541.

Abstract

We investigated the effects of the crystalline state for seed layers (SLs) on the growth morphology and material characteristics for hydrothermally grown ZnO nanorods (NRs). For this, preheating (PH) at different temperatures (100-300 °C) and O plasma treatment (PT) for 9 min were performed during the growth of SLs on p-Si by the aqueous solution-based method to provide the characteristic change on the NR growth platform. An improvement in material properties was achieved from the ZnO NRs grown on the SL crystals of enhanced crystalline quality in terms of the increased preferred orientation (002), the higher UV emission with suppressed deep-level emissions, the recovery of O/Zn stoichiometry, and the reduction of various intrinsic defects. Ultraviolet photodiodes of a p-Si/n-ZnO-NR structure fabricated under the SL conditions of O PT and PH at 100 °C showed a significantly enhanced on-off current ratio of ~90 at +5 V and faster photoresponse characteristics presenting a reduction in the fall time from 16 to 9 s.

摘要

我们研究了晶种层(SL)的结晶状态对水热生长 ZnO 纳米棒(NR)的生长形貌和材料特性的影响。为此,通过水溶液法在 p-Si 上生长 SL 时,在不同温度(100-300°C)下进行预热(PH)和 9 分钟的 O 等离子体处理(PT),以提供 NR 生长平台上的特征变化。从生长在具有增强结晶质量的 SL 晶体上的 ZnO NR 中获得了材料性能的改善,这体现在增加的择优取向(002)、抑制深能级发射的更高紫外发射、O/Zn 化学计量比的恢复以及各种本征缺陷的减少。在 SL 条件下制备的 p-Si/n-ZnO-NR 结构的紫外光电二极管在 O PT 和 PH 为 100°C 时,在+5 V 时的开-关电流比显著提高到~90,并且更快的光响应特性表现出下降时间从 16 秒减少到 9 秒。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dc84/9455808/52b25d9334e2/ijms-23-09541-g001.jpg

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