Xia Huinan, Li Yang, Cai Min, Qin Le, Zou Nianlong, Peng Lang, Duan Wenhui, Xu Yong, Zhang Wenhao, Fu Ying-Shuang
School of Physics and Wuhan National High Magnetic Field Center , Huazhong University of Science and Technology , Wuhan 430074 , China.
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics , Tsinghua University , Beijing 100084 , China.
ACS Nano. 2019 Aug 27;13(8):9647-9654. doi: 10.1021/acsnano.9b04933. Epub 2019 Aug 14.
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality NaBi thin films with √3 × √3 reconstruction on graphene and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in NaBi films, providing spectroscopic evidence of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on three and four monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a NaBi film can be tuned a certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in NaBi films and achieving potential applications in topological devices.
三维(3D)拓扑狄拉克半金属在被减薄至二维的少数层时,预计会拥有带隙狄拉克节点量子限制效应,并随之展现出引人入胜的量子自旋霍尔(QSH)绝缘体态。然而,对于理解拓扑量子相而言至关重要的从3D到2D的转变以及相关的拓扑相变,仍未得到探索。在此,我们在石墨烯上合成了具有√3×√3重构的高质量NaBi薄膜,并通过扫描隧道显微镜/光谱结合第一性原理计算,系统地表征了其与厚度相关的电子和拓扑性质。我们证明了在NaBi薄膜中出现了狄拉克能隙,为从3D半金属到2D拓扑绝缘体的维度转变提供了光谱证据。重要的是,在具有拓扑非平凡边缘态的三个和四个单层(分别为72和65毫电子伏特)上,狄拉克能隙显示出相当大的幅度。此外,NaBi薄膜的费米能量可以通过特定的生长过程进行调节,从而为在输运中实现电荷中性提供了一条可行的途径。控制狄拉克能隙的打开和电荷中性的可行性,使得在NaBi薄膜中实现本征高温QSH效应以及在拓扑器件中实现潜在应用成为可能。