Lee Eunji, Kim Hye Jin, Park Yejin, Lee Seungjun, Lee Sae Youn, Ha Taewon, Shin Hyun-Joon, Kim Youngbaek, Kim Jinsik
Department of Medical Biotechnology, Dongguk University, Seoul 04620, Korea.
Department of Clinical Pharmacology and Therapeutics, College of Medicine, Kyung Hee University, Seoul 02453, Korea.
Micromachines (Basel). 2019 Aug 11;10(8):530. doi: 10.3390/mi10080530.
Solution-based direct patterning on an elastomer substrate with meniscus-dragging deposition (MDD) enables fabrication of very thin carbon nanotube (CNT) layers in the nanometer scale (80-330 nm). To fabricate the CNT pattern with CNT solution, contact angle, electrical variation, mechanical stress, and surface cracks of elastomer substrate were analyzed to identify the optimal conditions of O treatment (treatment for 30 s with RF power of 50 W in O atmosphere of 50 sccm) and mixture ratio between Ecoflex and polydimethylsiloxane (PDMS) (Ecoflex:PDMS = 5:1). The type of mask for patterning of the CNT layer was determined through quantitative analysis for sharpness and uniformity of the fabricated CNT pattern. Through these optimization processes, the CNT pattern was produced on the elastomer substrate with selected mask (30 μm thick oriented polypropylene). The thickness of CNT pattern was also controlled to have hundreds nanometer and 500 μm wide rectangular and circular shapes were demonstrated. Furthermore, the change in the current and resistance of the CNT layer according to the applied strain on the elastomer substrate was analyzed. Our results demonstrated the potential of the MDD method for direct CNT patterning with high uniformity and the possibility to fabricate a stretchable sensor.
基于溶液的直接图案化技术,通过弯月面拖拽沉积(MDD)在弹性体基板上实现了纳米级(80 - 330 nm)极薄碳纳米管(CNT)层的制造。为了用CNT溶液制造CNT图案,对弹性体基板的接触角、电学变化、机械应力和表面裂纹进行了分析,以确定O处理(在50 sccm的O气氛中,以50 W的射频功率处理30 s)以及Ecoflex与聚二甲基硅氧烷(PDMS)的混合比例(Ecoflex:PDMS = 5:1)的最佳条件。通过对所制造的CNT图案的清晰度和均匀性进行定量分析,确定了用于CNT层图案化的掩膜类型。通过这些优化过程,在带有选定掩膜(30μm厚的定向聚丙烯)的弹性体基板上制备了CNT图案。还将CNT图案的厚度控制在数百纳米,并展示了500μm宽的矩形和圆形形状。此外,分析了弹性体基板上施加应变时CNT层的电流和电阻变化。我们的结果证明了MDD方法用于直接CNT图案化的高均匀性潜力以及制造可拉伸传感器的可能性。