Mukesh Kumar P C, Arun Kumar C M
Department of Mechanical Engineering, University College of Engineering, Dindigul, Tamilnadu, 624622, India.
Department of Electronics and Communication Engineering, University College of Engineering, Pattukottai, Tamilnadu, 614701, India.
Heliyon. 2019 Aug 7;5(8):e02227. doi: 10.1016/j.heliyon.2019.e02227. eCollection 2019 Aug.
Now a days Very-Large-Scale Integrated (VLSI) circuits are facing critical issues to satisfy the cooling demand because of shrinking the semiconductors. In this numerical work, the surface temperature of the chip, heat transfer rate, thermal resistance, power consumption and reliability are studied by using CuO/water nanofluids as coolant and compared the nanofluids results with the results of water. The CuO/water nanofluids at 0.25%, 0.5%, and 0.75% volume concentration are used for this investigation. The modelling, meshing and simulation are carried out by CATIAv5 and ANSYS Fluent v12 CFX software package. It is observed that the heat transfer rates of semiconductor using the coolant CuO/water nanofluid at 0.25%, 0.5%, and 0.75% volume concentrations are 25%, 43%, and 57% respectively higher than that of water. Found that the surface temperature of the semiconductor is lowered by 3%, 6%, and 8%, the thermal resistances decrease up to 6%, 10%, and 13%, and the Nusselt number increases by 25%, 43%, and 56%, when compared to water. It is also studied that the power consumption of the semiconductor reduces by 3%, 6%, and 8% at 0.25%, 0.5%, and 0.75% volume concentration respectively than water as coolant. It is also found that the failure rate of the semiconductor of using CuO/water nanofluids at 0.25%, 0.5%, and 0.75% volume concentration are 69%, 76%, and 84% respectively smaller than the water.
如今，超大规模集成电路（VLSI）由于半导体尺寸的缩小，在满足散热需求上面临着关键问题。在这项数值研究中，以氧化铜/水纳米流体作为冷却剂，研究了芯片的表面温度、传热速率、热阻、功耗和可靠性，并将纳米流体的结果与水的结果进行了比较。本研究使用体积浓度为0.25%、0.5%和0.75%的氧化铜/水纳米流体。建模、网格划分和模拟通过CATIAv5和ANSYS Fluent v12 CFX软件包进行。观察到，使用体积浓度为0.25%、0.5%和0.75%的冷却剂氧化铜/水纳米流体时，半导体的传热速率分别比水高25%、43%和57%。发现与水相比，半导体的表面温度降低了3%、6%和8%，热阻分别降低了6%、10%和13%，努塞尔数分别增加了25%、43%和56%。还研究发现，当分别以体积浓度为0.25%、0.5%和0.75%的氧化铜/水纳米流体作为冷却剂时，半导体的功耗分别比水降低了3%、6%和8%。还发现，使用体积浓度为0.25%、0.5%和0.75%的氧化铜/水纳米流体时，半导体的故障率分别比水小69%、76%和84%。
