Zhang Yajun, Zeng Xingrong, Lai Xuejun, Li Hongqiang, Zhou Quan, Huang Xiaoyi
College of Materials Science and Engineering, South China University of Technology, No 381, Wushan Road, Tianhe District, Guangzhou 510640, Guangdong, China.
ACS Omega. 2017 Aug 29;2(8):5111-5121. doi: 10.1021/acsomega.7b00904. eCollection 2017 Aug 31.
How to effectively enhance the antitracking performance of silicone rubber is a huge challenge in the field of high-voltage insulation. In this contribution, amine-containing MQ silicone resin (A-MQ) was prepared to enhance the tracking and erosion resistance of addition-cure liquid silicone rubber (ALSR). The results showed that A-MQ imparted ALSR with excellent tracking and erosion resistance. When A-MQ content was 4 phr, all test samples passed the inclined plane test at 4.5 kV, and the erosion mass decreased by 67.8%. In addition, the tensile strength and tear strength increased by 13.2 and 13.6%, respectively, compared with that of ALSR without A-MQ. The suppression mechanism was further investigated in the aspects of heat attack and plasma bombardment by laser Raman spectroscopy, thermogravimetry, thermogravimetry-Fourier transform infrared spectrometry, scanning electron microscopy, attenuated total reflection-Fourier transform infrared spectrometry, and X-ray photoelectron spectroscopy. This revealed that at the elevated temperature caused by arc discharge, A-MQ promoted crosslinking of the polysiloxane molecules and suppressed the generation of cyclic oligomers, which reduced the intensity of the electrical arc. Moreover, when suffering from plasma bombardment, which was also produced by arc discharge, A-MQ protected the silicone chains from degradation and eliminated the carbon deposited on the surface.
如何有效提高硅橡胶的抗漏电起痕性能是高压绝缘领域面临的巨大挑战。在本研究中，制备了含胺MQ硅树脂（A-MQ）以提高加成型液体硅橡胶（ALSR）的耐漏电起痕和耐电蚀性能。结果表明，A-MQ赋予ALSR优异的耐漏电起痕和耐电蚀性能。当A-MQ含量为4份时，所有测试样品在4.5 kV下通过斜面试验，电蚀质量降低了67.8%。此外，与不含A-MQ的ALSR相比，拉伸强度和撕裂强度分别提高了13.2%和13.6%。通过激光拉曼光谱、热重分析、热重-傅里叶变换红外光谱、扫描电子显微镜、衰减全反射-傅里叶变换红外光谱和X射线光电子能谱等手段，从热攻击和等离子体轰击方面进一步研究了抑制机理。结果表明，在电弧放电引起的高温下，A-MQ促进了聚硅氧烷分子的交联，抑制了环状低聚物的生成，从而降低了电弧强度。此外，当受到同样由电弧放电产生的等离子体轰击时，A-MQ保护硅链不被降解，并消除了表面沉积的碳。
