Mahadevu Rekha, Pandey Anshu
Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India.
ACS Omega. 2018 Jan 10;3(1):266-272. doi: 10.1021/acsomega.7b01486. eCollection 2018 Jan 31.
Two initially neutral semiconductor quantum dots with appropriate band offsets can participate in a ground state charge transfer process. The charge transfer manifests itself in the form of bleaching of optical transitions and also causes the quantum dots to precipitate from solution, giving rise to assemblies with unusual properties. As this represents a postsynthetic modification of the electronic structure of quantum dots, it holds tremendous potential for improving the characteristics of quantum dot devices. Here, we study the dependencies of the properties of these assemblies on the structure of the participating quantum dots. In particular, we find that for assemblies formed out of Cu:CdS and ZnTe/CdS quantum dots, the composition of the assembly varies from 1:1.26 to 1:0.23 ZnTe/CdS to Cu:CdS as the shell thickness of CdS in ZnTe/CdS is increased. In contrast, the composition changes from 1:1.1 to 1:15 for PbSe/CdSe and Cu:CdS quantum dots, as the size of the PbSe core is increased. These observations are explained on the basis of a phenomenological thermodynamic model. The applicability of thermodynamics to this example of self-assembly is verified empirically.
两个初始呈中性的具有合适带隙偏移的半导体量子点可以参与基态电荷转移过程。电荷转移以光学跃迁漂白的形式表现出来,并且还会导致量子点从溶液中沉淀出来,从而形成具有异常性质的聚集体。由于这代表了量子点电子结构的合成后修饰,它在改善量子点器件特性方面具有巨大潜力。在此,我们研究这些聚集体的性质对参与其中的量子点结构的依赖性。特别地,我们发现对于由Cu:CdS和ZnTe/CdS量子点形成的聚集体,随着ZnTe/CdS中CdS壳层厚度的增加,聚集体的组成从1:1.26的ZnTe/CdS变为1:0.23的Cu:CdS。相反,对于PbSe/CdSe和Cu:CdS量子点,随着PbSe核尺寸的增加,组成从1:1.1变为1:15。这些观察结果基于一个唯象热力学模型得到了解释。热力学在此自组装实例中的适用性通过实验得到了验证。