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通过基于苝单酰亚胺染料的π桥扩展增强光电流用于p型染料敏化太阳能电池和光电化学电池

Enhanced Photocurrent via π-Bridge Extension of Perylenemonoimide-Based Dyes for p-Type Dye-Sensitized Solar Cells and Photoelectrochemical Cells.

作者信息

Ye Haonan, Shen Luze, Zhang Shicong, Li Xing, Yu Fengtao, Diao Ruimin, Hua Jianli

机构信息

Key Laboratory for Advanced Materials, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China.

出版信息

ACS Omega. 2018 Oct 31;3(10):14448-14456. doi: 10.1021/acsomega.8b01910.

DOI:10.1021/acsomega.8b01910
PMID:31458130
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6644769/
Abstract

Two dyes and containing triphenylamine as the donor and perylenemonoimide as the acceptor, with and without bithiophene as π-bridge, respectively, were successfully prepared and characterized for p-type dye-sensitized solar cells (p-DSSCs) and dye-sensitized photoelectrochemical cells (DS-PECs). As a result, with bithiophene π-bridge exhibited a broader absorption spectrum and a higher molar extinction coefficient than . Furthermore, the photocurrents of p-DSSCs and DS-PECs for the dye were increased by 26.9 and 32.9%, respectively, compared with those of the dye . Meanwhile, the electrochemical impedance spectroscopy of the -based p-DSSC showed the smaller charge-transfer resistance and larger hole lifetime because the longer π-bridge facilitated charge transfer and separation within the dye molecule and effectively prevented the hole recombination process at the NiO/dye interface, resulting in improvement of photoelectric performance. Hence, these results show that the π-bridge extension of dyes has a promising effect on the photocurrent improvement of p-DSSCs and DS-PECs.

摘要

成功制备了两种染料,分别以三苯胺作为供体、苝单酰亚胺作为受体,一种含有联噻吩作为π桥,另一种不含联噻吩作为π桥,并对其用于p型染料敏化太阳能电池(p-DSSCs)和染料敏化光电化学电池(DS-PECs)进行了表征。结果表明,含有联噻吩π桥的染料比不含联噻吩π桥的染料表现出更宽的吸收光谱和更高的摩尔消光系数。此外,与不含联噻吩π桥的染料相比,含有联噻吩π桥的染料用于p-DSSCs和DS-PECs时的光电流分别增加了26.9%和32.9%。同时,基于含有联噻吩π桥染料的p-DSSC的电化学阻抗谱显示出更小的电荷转移电阻和更长的空穴寿命,这是因为更长的π桥促进了染料分子内的电荷转移和分离,并有效阻止了NiO/染料界面处的空穴复合过程,从而提高了光电性能。因此,这些结果表明染料的π桥扩展对p-DSSCs和DS-PECs的光电流提高具有显著作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/808b1ba022f2/ao-2018-019108_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/e4aca5fb4b2b/ao-2018-019108_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/2838a52eaa84/ao-2018-019108_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/5dfcaa25af8a/ao-2018-019108_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/932b89c76100/ao-2018-019108_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/ee71fa55c565/ao-2018-019108_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/e9059fcab795/ao-2018-019108_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/36dfb3b0c73b/ao-2018-019108_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/75628615b176/ao-2018-019108_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/808b1ba022f2/ao-2018-019108_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/e4aca5fb4b2b/ao-2018-019108_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/2838a52eaa84/ao-2018-019108_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/5dfcaa25af8a/ao-2018-019108_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/932b89c76100/ao-2018-019108_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/ee71fa55c565/ao-2018-019108_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/e9059fcab795/ao-2018-019108_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/36dfb3b0c73b/ao-2018-019108_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/75628615b176/ao-2018-019108_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c328/6644769/808b1ba022f2/ao-2018-019108_0006.jpg

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