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用于白色近紫外发光二极管的高发光性N取代LiMSiON:Eu(M = Ca、Sr和Ba)

Highly Luminous N-Substituted LiMSiON:Eu (M = Ca, Sr, and Ba) for White NUV Light-Emitting Diodes.

作者信息

Kim Donghyeon, Ji Choon Woo, Lee Jungjun, Bae Jong-Seong, Hong Tae Eun, Ahn Sung Il, Chung In, Kim Seung-Joo, Park Jung-Chul

机构信息

Department of Energy Systems Research and Department of Chemistry, Ajou University, Suwon 16499, Republic of Korea.

Center for Green Fusion Technology and Department of Engineering in Energy & Applied Chemistry, Silla University, Busan 46958, Republic of Korea.

出版信息

ACS Omega. 2019 May 13;4(5):8431-8440. doi: 10.1021/acsomega.8b03489. eCollection 2019 May 31.

Abstract

The N-substituted LiMSiO:Eu (M = Ca, Sr, and Ba) phosphors were systematically prepared and analyzed. Secondary-ion mass spectroscopy measurements revealed that the average N contents are 0.003 for Ca, 0.009 for Sr, and 0.032 for Ba. Furthermore, the N incorporation in the host lattices was corroborated by infrared and X-ray photoelectron spectroscopies. From the photoluminescence spectra of LiMSiO:Eu (M = Ca, Sr, and Ba) phosphors before and after N doping, it was verified that the enhanced emission intensity of the phosphors is most likely due to the N doping. In LiMSiO:Eu (M = Ca, Sr, and Ba) phosphors, the maximum wavelengths of the emission band were red-shifted in the order Ca < Ba < Sr, which is not consistent with the trend of crystal field splitting: Ba < Sr < Ca. This discrepancy was clearly explained by electron-electron repulsions among polyhedra, LiO-MO , SiO-MO , and MO -M'O associated with structural difference in the host lattices. Therefore, the energy levels associated with the 4f5d energy levels of Eu are definitely established in the following order: LiCaSiO:Eu > LiBaSiO:Eu > LiSrSiO:Eu. Furthermore, using the Williamson-Hall (W-H) method, the determined structural strains of LiMSiO:Eu (M = Ca, Sr, and Ba) phosphors revealed that the increased compressive strain after N doping induces the enhanced emission intensity of these phosphors. White light-emitting diodes made by three N-doped phosphors and a 365 nm emitting InGaN chip showed the (0.333, 0.373) color coordinate and high color-rendering index ( = 83). These phosphor materials may provide a platform for development of new efficient phosphors in solid-state lighting field.

摘要

系统地制备并分析了N取代的LiMSiO:Eu(M = Ca、Sr和Ba)荧光粉。二次离子质谱测量表明,Ca的平均N含量为0.003,Sr为0.009,Ba为0.032。此外,红外光谱和X射线光电子能谱证实了N在主体晶格中的掺入。从N掺杂前后LiMSiO:Eu(M = Ca、Sr和Ba)荧光粉的光致发光光谱可知,荧光粉发射强度增强很可能是由于N掺杂。在LiMSiO:Eu(M = Ca、Sr和Ba)荧光粉中,发射带的最大波长按Ca < Ba < Sr的顺序发生红移,这与晶体场分裂趋势Ba < Sr < Ca不一致。通过与主体晶格结构差异相关的多面体LiO-MO 、SiO-MO 和MO -M'O 之间的电子-电子排斥,清楚地解释了这种差异。因此,与Eu的4f5d能级相关的能级肯定按以下顺序确定:LiCaSiO:Eu > LiBaSiO:Eu > LiSrSiO:Eu。此外,使用威廉姆森-霍尔(W-H)方法,测定的LiMSiO:Eu(M = Ca、Sr和Ba)荧光粉的结构应变表明,N掺杂后压缩应变增加导致这些荧光粉的发射强度增强。由三种N掺杂荧光粉和一个发射365 nm的InGaN芯片制成的白光发光二极管显示出(0.333, 0.373)的色坐标和高显色指数( = 83)。这些荧光粉材料可为固态照明领域新型高效荧光粉的开发提供一个平台。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/33ab/6648572/938759dfe8e8/ao-2018-03489g_0001.jpg

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