Department of Materials Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan.
ACS Appl Mater Interfaces. 2019 Sep 18;11(37):34212-34221. doi: 10.1021/acsami.9b09772. Epub 2019 Sep 6.
Thin films of Ag nanowires (NWs) offer many advantages as transparent electrodes for flexible electronics, but their applications are hindered by issues including poor stability/durability of Ag NWs, high processing temperatures, heterogeneity of surfaces, and lack of gas-barrier function. This study reports novel mechanisms through which a conductive Hf:ZnO (HZO) film by atomic layer deposition (ALD) can be integrated with a sprayed Ag NWs film to address the issues of Ag NWs. First, the ALD surface reactions can induce fusing of the Ag NWs into a connected network without the need for a thermal sintering process. Second, the ALD process can in situ functionalize the Ag NWs to yield defect-free (in terms of blocking gas permeation) coverage of the ALD HZO over the entire nanowire surfaces, which also enhances the ALD-induced fusing of Ag NWs. The composite HZO/Ag NWs films exhibit low sheet resistance (15 Ω sq), low water vapor transmission rate (WVTR) (5.1 × 10 g m day), high optical transmission (92%), excellent flexibility (12.5 mm bending radius), high stability/durability (against an extensive set of degradation modes and photolithographic patterning processes), and low processing temperature (90 °C) and can be used in perovskite solar cells to obtain high power conversion efficiency (14.46%).
Ag 纳米线(NWs)薄膜作为用于柔性电子的透明电极具有许多优势,但它们的应用受到一些问题的限制,包括 Ag NWs 的稳定性/耐久性差、加工温度高、表面不均匀以及缺乏气体阻隔功能。本研究报告了通过原子层沉积(ALD)将导电 Hf:ZnO(HZO)薄膜集成到喷涂的 Ag NWs 薄膜中以解决 Ag NWs 问题的新机制。首先,ALD 表面反应可以诱导 Ag NWs 融合成一个连通的网络,而无需热烧结过程。其次,ALD 过程可以原位官能化 Ag NWs,从而在整个纳米线表面上实现无缺陷(就阻挡气体渗透而言)的 ALD HZO 覆盖,这也增强了 ALD 诱导的 Ag NWs 融合。复合 HZO/Ag NWs 薄膜表现出低方阻(15 Ω/sq)、低水蒸气透过率(WVTR)(5.1×10-6 g m-2 day-1)、高透光率(92%)、出色的柔韧性(12.5mm 弯曲半径)、高稳定性/耐久性(可承受广泛的降解模式和光刻图案化工艺)以及低加工温度(90°C),可用于钙钛矿太阳能电池以获得高功率转换效率(14.46%)。