Sulaman Muhammad, Song Yong, Yang Shengyi, Hao Qun, Zhao Yuejin, Li Maoyuan, Saleem Muhammad Imran, Chandraseakar Perumal Veeramalai, Jiang Yurong, Tang Yi, Zou Bingsuo
Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, People's Republic of China. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China. Key Lab of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
Nanotechnology. 2019 Nov 15;30(46):465203. doi: 10.1088/1361-6528/ab3b7a. Epub 2019 Sep 2.
Recently, great attention has been paid to IV-VI colloidal quantum dots (CQDs) for their high photosensitivity, solution processability and low cost. Also, metal halide perovskites are very promising materials to realize the high-performance solution-processed visible-light photodetectors due to their cost-effective manufacturing, tunable absorption and photoluminescence in whole visible spectrum. In this paper, we present solution-processed CQDs-based tandem broadband photodetectors with low dark-current and high-sensitivity by inserting dielectric Polymethyl methacrylate (PMMA) interlayer between two sub-detectors. Our experimental data showed that the tandem broadband photodetector ITO/PEDOT:PSS/CsPbBr:PbSSe/ZnO/PVK/CsPbBr:PbSSe/ZnO/Au showed a maximum specific detectivity of 6.8 × 10 Jones with a responsivity of 27 A W under 57.8 μW cm 980 nm illumination. The device performance can be further enhanced by inserting a 50 nm dielectric PMMA layer between the two sub-photodetectors. As the result, the tandem photodetector ITO/PEDOT:PSS/CsPbBr:PbSSe/ZnO/PMMA(50 nm)/PVK/CsPbBr:PbSSe/ZnO/Au exhibits a maximum specific detectivity of 1.32 × 10 Jones with a responsivity of 27.72 A W under 57.8 μW cm of 980 nm laser. Further, the physical mechanisms for the enhanced performance are discussed in detail.
最近,IV-VI族胶体量子点(CQDs)因其高光敏性、溶液可加工性和低成本而备受关注。此外,金属卤化物钙钛矿由于其具有成本效益的制造工艺、在整个可见光谱范围内可调的吸收和光致发光特性,是实现高性能溶液加工可见光探测器的非常有前途的材料。在本文中,我们通过在两个子探测器之间插入介电聚甲基丙烯酸甲酯(PMMA)中间层,展示了具有低暗电流和高灵敏度的溶液加工的基于CQDs的串联宽带探测器。我们的实验数据表明,串联宽带探测器ITO/PEDOT:PSS/CsPbBr:PbSSe/ZnO/PVK/CsPbBr:PbSSe/ZnO/Au在980nm、57.8μW cm的光照下,最大比探测率为6.8×10琼斯,响应度为27 A W。通过在两个子光电探测器之间插入一个50nm的介电PMMA层,可以进一步提高器件性能。结果,串联探测器ITO/PEDOT:PSS/CsPbBr:PbSSe/ZnO/PMMA(50nm)/PVK/CsPbBr:PbSSe/ZnO/Au在980nm、57.8μW cm的激光照射下,最大比探测率为1.32×10琼斯,响应度为27.72 A W。此外,还详细讨论了性能增强的物理机制。