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设计具有高效光吸收和电荷分离的 WO/CdInS 型-II 异质结,以增强光电化学水分解。

Designing WO/CdInS type-II heterojunction with both efficient light absorption and charge separation for enhanced photoelectrochemical water splitting.

机构信息

School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China.

出版信息

Nanotechnology. 2019 Dec 6;30(49):495402. doi: 10.1088/1361-6528/ab4084. Epub 2019 Sep 2.

Abstract

WO is a typical photoanode material for photoelectrochemical (PEC) water splitting. However, the PEC activity of WO photoanode is limited by its poor visible light absorption as well as severe carrier recombination at the electrode/electrolyte interface. Herein, we integrate small-band-gap CdInS nanoplates with hydrothermally grown WO nanowall arrays to form into a three-dimensional (3D) WO/CdInS heterojunction through a chemical bath deposition process. The synthesis parameters of CdInS, including reaction time and temperature, have been tuned to optimize the PEC performance. The WO/CdInS composite photoanode prepared at 50 °C for 5 h exhibits the highest photocurrent of 1.06 mA cm at 1.23 V versus reversible hydrogen electrode without the presence of holes scavenger, which is about 5.9 times higher than that of bare WO photoanode. The band alignment between WO and CdInS is confirmed by the ultraviolet-visible light absorption spectra and ultraviolet photoelectron spectra. The PEC performance enhancement is attributed to the enhanced light absorption benefiting from the small band gap of CdInS and efficient charge separation originating from the type-II alignment between WO and CdInS.

摘要

WO 是光电化学(PEC)水分解的典型光阳极材料。然而,WO 光阳极的 PEC 活性受到其对可见光吸收差以及电极/电解质界面处载流子复合严重的限制。在此,我们通过化学浴沉积工艺将具有小带隙的 CdInS 纳米板与水热生长的 WO 纳米墙阵列集成到三维(3D)WO/CdInS 异质结中。CdInS 的合成参数,包括反应时间和温度,已经过调整以优化 PEC 性能。在 50°C 下反应 5 小时制备的 WO/CdInS 复合光阳极在没有空穴清除剂的情况下,在 1.23 V 相对于可逆氢电极时表现出最高的光电流 1.06 mA cm,比裸 WO 光阳极高约 5.9 倍。WO 和 CdInS 之间的能带排列通过紫外可见吸收光谱和紫外光电子能谱得到证实。PEC 性能的提高归因于 CdInS 的小带隙增强了光吸收,以及 WO 和 CdInS 之间的 II 型排列促进了有效的电荷分离。

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