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界面粗糙度自旋散射对 YIG/NiO/Pt 异质结构中自旋电流输运的影响。

Effect of Interfacial Roughness Spin Scattering on the Spin Current Transport in YIG/NiO/Pt Heterostructures.

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China.

Zhejiang Hikstor Technology Co., Ltd. , Hangzhou , 310000 , China.

出版信息

ACS Appl Mater Interfaces. 2019 Sep 25;11(38):35458-35467. doi: 10.1021/acsami.9b12125. Epub 2019 Sep 11.

Abstract

Interfacial properties play a vital role in spin current injection from the ferromagnetic (FM) layer into the nonmagnetic (NM) layer. So far, impedance matching and spin-orbit coupling are two important, well-known factors in spin current transport in FM/NM heterostructures. In this work, the spin current transport in YFeO (YIG)/NiO/Pt heterostructures was investigated by spin Hall magnetoresistance and inverse spin Hall effect measurements. By inserting a layer of antiferromagnetic insulator NiO, the magnetic proximity effect affecting the Pt atoms owing to YIG and the anomalous spin Hall voltage can be efficiently blocked. Ferromagnetic resonance and spin pumping measurements verified that the ferromagnetic/antiferromagnetic exchange coupling inhibits transmission of the spin current at the YIG/NiO interface when the NiO layer is thick. Atomic force microscopy and spherical aberration-corrected transmission electron microscopy proved that the strong interfacial roughness-enhanced spin scattering between NiO and Pt can greatly increase both the inverse spin Hall voltage and the spin Hall magnetoresistance when the NiO layer is thin or even discontinuous. This interface roughness-dominated spin scattering mechanism based on the YIG/NiO/Pt heterostructure is a new discovery, and there is significant potential for exploiting this mechanism in the construction of low-dissipation spintronic devices with an efficient spin current injection.

摘要

界面特性在铁磁(FM)层向非磁(NM)层注入自旋电流中起着至关重要的作用。到目前为止,阻抗匹配和自旋轨道耦合是 FM/NM 异质结构中自旋电流输运的两个重要的、众所周知的因素。在这项工作中,通过自旋霍尔磁电阻和反自旋霍尔效应测量研究了 YFeO(YIG)/NiO/Pt 异质结构中的自旋电流输运。通过插入一层反铁磁绝缘体 NiO,可以有效地阻止由于 YIG 而影响 Pt 原子的磁近邻效应和反常自旋霍尔电压。铁磁共振和自旋泵浦测量证实,当 NiO 层较厚时,铁磁/反铁磁交换耦合抑制了自旋电流在 YIG/NiO 界面的传输。原子力显微镜和球差校正透射电子显微镜证明,在 NiO 层较薄甚至不连续时,NiO 与 Pt 之间强烈的界面粗糙度增强的自旋散射可以大大增加反自旋霍尔电压和自旋霍尔磁电阻。基于 YIG/NiO/Pt 异质结构的这种由界面粗糙度主导的自旋散射机制是一个新的发现,在构建具有高效自旋电流注入的低损耗自旋电子器件方面具有重要的应用潜力。

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