Łukasiewicz Research Network-Institute of Electronic Materials Technology, Wólczynska 133, 01-919 Warsaw, Poland.
Chem Commun (Camb). 2019 Sep 24;55(77):11539-11542. doi: 10.1039/c9cc04707g.
Further development of gallium nitride (GaN) based optoelectronic devices requires in-depth understanding of the defects present in GaN grown on a sapphire substrate. In this work, we present three dimensional secondary ion mass spectrometry (SIMS) detection of oxygen. Distribution of these impurities is not homogeneous and the vast majority of oxygen atoms are agglomerated along pillar-shaped structures. Defect-selective etching and scanning electron microscopy imaging complement SIMS results and reveal that oxygen is predominantly present along the cores of screw and mixed dislocations, which proves their high tendency to be decorated by oxygen. A negligible amount of oxygen can be found within the bulk of the material and along the edge dislocations.
进一步开发基于氮化镓 (GaN) 的光电设备需要深入了解在蓝宝石衬底上生长的 GaN 中存在的缺陷。在这项工作中，我们提出了三维二次离子质谱 (SIMS) 对氧的检测。这些杂质的分布不均匀，绝大多数氧原子聚集在柱形结构中。缺陷选择性蚀刻和扫描电子显微镜成像补充了 SIMS 结果，并表明氧主要存在于螺旋和混合位错的核心，这证明了它们被氧装饰的高倾向。在材料的大部分和边缘位错中可以发现少量的氧。
