基于氧化铟锡（ITO）和氮化锆（ZrN）的互补金属氧化物半导体（CMOS）兼容混合双金属横电波（TE）/横磁波（TM）通偏振器。

CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN.

作者信息

Kandeel Ahmed F, Hameed Mohamed Farhat O, AbdElHamid Hamdy, Obayya S S A

出版信息

Appl Opt. 2019 Aug 20;58(24):6684-6692. doi: 10.1364/AO.58.006684.

DOI:10.1364/AO.58.006684

Abstract

Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7 dB extinction ratio (ER) and 0.13 dB insertion loss (IL) at a compact device length of 1.5 μm. Additionally, the TM-pass polarizer has 31.5 dB ER and 0.17 dB IL at a device length of 2 μm at an operating wavelength of 1.55 μm.

摘要

研究并分析了基于绝缘体上硅平台的横向磁（TM）和横向电（TE）通过型偏振器。所提出的结构基于氧化铟锡和氮化锆作为替代等离子体材料，与CMOS兼容。等离子体材料的双金属组合在硅芯中的一种模式（TE或TM）与表面等离子体模式之间表现出大的耦合，而另一种模式可以低损耗传播。TE通过型偏振器的数值模拟预测，在紧凑的1.5μm器件长度下，消光比（ER）为32.7dB，插入损耗（IL）为0.13dB。此外，在1.55μm的工作波长下，TM通过型偏振器在2μm的器件长度下具有31.5dB的ER和0.17dB的IL。