Huang Ying, Zhu Shiyang, Zhang Huijuan, Liow Tsung-Yang, Lo Guo-Qiang
Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road,Singapore Science Park II, 117685, Singapore.
Opt Express. 2013 May 20;21(10):12790-6. doi: 10.1364/OE.21.012790.
An ultra-compact broadband TE-pass polarizer was proposed and demonstrated on the silicon-on-insulator (SOI) platform, using the horizontal nanoplasmonic slot waveguide (HNSW). Detailed design principle was presented, taking advantage of the distinct confinement region of the TE and TM modes in the HNSW. TM mode cut-off could be achieved when waveguide width was below 210 nm. Proof-of-concept devices were subsequently fabricated in a CMOS-compatible process. The optimized device had an active region length of 1 μm, three orders of magnitude smaller than similar device previously demonstrated on the SOI platform. More than 16 dB polarization extinction ratio was achieved across 80 nm wavelength range, with a relatively low insertion loss of 2.2dB. The compact device size and excellent broadband performance could provide a simple yet satisfactory solution to the polarization dependent performance drawback of the silicon photonics devices on the SOI platform.
提出并在绝缘体上硅（SOI）平台上展示了一种超紧凑宽带TE模偏振器，该偏振器采用水平纳米等离子体狭缝波导（HNSW）。利用HNSW中TE和TM模式不同的限制区域，给出了详细的设计原理。当波导宽度低于210nm时，可以实现TM模式截止。随后采用CMOS兼容工艺制造了概念验证器件。优化后的器件有源区长度为1μm，比之前在SOI平台上展示的类似器件小三个数量级。在80nm波长范围内实现了超过16dB的偏振消光比，插入损耗相对较低，为2.2dB。紧凑的器件尺寸和优异的宽带性能可为解决SOI平台上硅光子器件的偏振相关性能缺陷提供一个简单而令人满意的解决方案。
