Abadía Nicolás, Saber Md Ghulam, Bello Frank, Samani Alireza, El-Fiky Eslam, Wang Yun, Donegan John F, Plant David V
Opt Express. 2018 Nov 12;26(23):30292-30304. doi: 10.1364/OE.26.030292.
A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.
对一种能够在O、E、S、C、L和U波段工作的CMOS兼容等离子体TE模偏振器进行了数值分析。该器件基于具有分段金属设计的集成混合等离子体波导（HPW）。分段金属将避免被限制在HPW狭缝中的TM模传播，而TE基模将通过。TE模不受金属分段的影响，因为它被限制在HPW的纤芯中。分段金属的概念可应用于以HPW作为电路各部分之间连接波导的等离子体电路，以及以条形或平板波导连接电路不同部分的硅光子学电路。通过三维有限时域差分（3D FDTD）模拟表明，对于长度为5.5μm的器件，在所有光通信波段上，偏振消光比均优于20dB，插入损耗小于1.7dB。
