Qi Runze, Huang Qiushi, Fei Jiani, Kozhevnikov Igor V, Liu Yang, Li Pin, Zhang Zhong, Wang Zhanshan
Key Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
Shubnikov Institute of Crystallography of Federal Scientific Research Centre "Crystallography and Photonics" of the Russian Academy of Sciences, Leninskiy pr. 59, Moscow 119333, Russia.
Materials (Basel). 2019 Sep 11;12(18):2936. doi: 10.3390/ma12182936.
Cr/V multilayer mirrors are suitable for applications in the "water window" spectral ranges. To study factors influencing the internal microstructure of Cr/V multilayers, multilayers with different vanadium layers thicknesses varying from 0.6 nm to 4.0 nm, and a fixed thickness (1.3 nm) of chromium layers, were fabricated and characterized with a set of experimental techniques. The average interface width characterizing a cumulative effect of different structure irregularities was demonstrated to exhibit non-monotonous dependence on the V layer thickness and achieve a minimal value of 0.31 nm when the thickness of the V layers was 1.2 nm. The discontinuous growth of very thin V films increased in roughness as the thickness of V layers decreased. The columnar growth of the polycrystalline grains in both materials became more pronounced with increasing thickness, resulting in a continuous increase in the interface width to a maximum of 0.9 nm for a 4 nm thickness of the V layer.
Cr/V多层膜适用于“水窗”光谱范围的应用。为了研究影响Cr/V多层膜内部微观结构的因素，制备了钒层厚度从0.6纳米到4.0纳米不等且铬层厚度固定为1.3纳米的多层膜，并用一系列实验技术对其进行了表征。表征不同结构不规则累积效应的平均界面宽度被证明对V层厚度呈现非单调依赖性，当V层厚度为1.2纳米时达到最小值0.31纳米。非常薄的V膜的不连续生长随着V层厚度的减小粗糙度增加。两种材料中多晶晶粒的柱状生长随着厚度增加变得更加明显，导致界面宽度持续增加，对于4纳米厚的V层，界面宽度最大达到0.9纳米。
