Zhang Z, Lagally MG
Z. Y. Zhang is a research staff member in the Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6032, USA. E-mail:
Science. 1997 Apr 18;276(5311):377-83. doi: 10.1126/science.276.5311.377.
Growth of thin films from atoms deposited from the gas phase is intrinsically a nonequilibrium phenomenon governed by a competition between kinetics and thermodynamics. Precise control of the growth and thus of the properties of deposited films becomes possible only after an understanding of this competition is achieved. Here, the atomic nature of the most important kinetic mechanisms of film growth is explored. These mechanisms include adatom diffusion on terraces, along steps, and around island corners; nucleation and dynamics of the stable nucleus; atom attachment to and detachment from terraces and islands; and interlayer mass transport. Ways to manipulate the growth kinetics in order to select a desired growth mode are briefly addressed.
由气相沉积的原子生长薄膜本质上是一种非平衡现象，受动力学和热力学之间的竞争支配。只有在理解了这种竞争之后，才有可能精确控制生长过程，进而控制沉积薄膜的性能。在此，我们探讨了薄膜生长最重要的动力学机制的原子本质。这些机制包括吸附原子在平台上、沿着台阶以及围绕岛角的扩散；稳定核的成核与动力学；原子在平台和岛的附着与脱离；以及层间质量传输。我们还简要讨论了操纵生长动力学以选择所需生长模式的方法。
