基于 IDT 的 p 型共轭聚合物的骨架结构对其热电性能的影响。
Backbone Structure Effect on the Thermoelectric Properties of IDT-Based p-Type Conjugated Polymers.
机构信息
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
出版信息
Macromol Rapid Commun. 2020 Jan;41(1):e1900322. doi: 10.1002/marc.201900322. Epub 2019 Sep 18.
Four conjugated polymers are synthesized through indacenodithiohene (IDT) unit copolymerized with thiophene and thiophene derivatives. Indacenodithiohene-co-thieno[3,2-b]thiophene (IDT-TT) and indacenodithiohene-co-trans-1,2-di(2-thienyl)ethylene (IDT-TVT) exhibit better charge transport mobilities than indacenodithiohene-co-thiophene (IDT-T) and indacenodithiohene-co-3,4-ethoxylene dioxythiophene (IDT-EDOT), and also display superior thermoelectric properties after doping. Theoretical calculations suggest that IDT-EDOT and IDT-TVT have better coplanarities; the inferior performance for IDT-EDOT might be due to its low molecular weight. Meanwhile, it is worth mentioning that via the synergistic effect of two dopants (CN6CP, CuTFSI), the electrical conductivities of the polymers are further improved. The XPS data shows that the coordination interaction between copper ion and the cyano groups of CN6CP introduces cupric ions into the polymer films, which leads to the increase of the doping ratio.
通过将吲哚并[2,1-b]噻吩（IDT）单元与噻吩和噻吩衍生物共聚，合成了四种共轭聚合物。吲哚并[2,1-b]噻吩-并-噻吩[3,2-b]噻吩（IDT-TT）和吲哚并[2,1-b]噻吩-并-反式-1,2-二（2-噻吩基）乙烯（IDT-TVT）的电荷输运迁移率优于吲哚并[2,1-b]噻吩-并-噻吩（IDT-T）和吲哚并[2,1-b]噻吩-并-3,4-乙撑二氧噻吩（IDT-EDOT），并且在掺杂后显示出更好的热电性能。理论计算表明，IDT-EDOT 和 IDT-TVT 具有更好的共面性；IDT-EDOT 的性能较差可能是由于其分子量较低。同时，值得一提的是，通过两种掺杂剂（CN6CP、CuTFSI）的协同作用，聚合物的电导率得到了进一步提高。XPS 数据表明，铜离子与 CN6CP 的氰基之间的配位相互作用将铜离子引入聚合物薄膜中，从而增加了掺杂比。
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