King Abdullah University of Science and Technology (KAUST) , KAUST Solar Center , Thuwal Jeddah 23955-6900 , Kingdom of Saudi Arabia.
Technology Development Center , Metatest Optoelectronic Company Limited , Nanjing , Jiangsu 215000 , China.
ACS Appl Mater Interfaces. 2019 Oct 30;11(43):40204-40213. doi: 10.1021/acsami.9b11835. Epub 2019 Oct 21.
Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CHNHPbI (MAPbI)/CdS heterostructures are demonstrated. The resulting self-powered MAPbI/CdS photodetectors show excellent operating characteristics including a maximum detectivity of 2.3 × 10 Jones with a responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI/CdS junction were investigated via conductive atomic force microscopy (AFM) and photoconductive AFM. Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, that is, at the edges of the MAPbI crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of the high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.
甲脒铅卤钙钛矿因其显著的物理性质和在众多(光电)电子应用中的潜力而受到广泛关注。在此,展示了基于 CHNHPbI(MAPbI)/CdS 异质结的高性能光电探测器。所得到的自供电 MAPbI/CdS 光电探测器表现出优异的工作特性,包括在 730nm 下测量的最大探测率为 2.3×10^10Jones,响应率为 0.43A/W。实现了小于 14ms 的时间响应时间。通过导电原子力显微镜(AFM)和光电导 AFM 研究了 MAPbI/CdS 结界面处的电荷分离和输运机制。获得的结果表明,晶粒界面对光电流的贡献高于顶部钙钛矿层的平坦区域,这表明激子优先在钙钛矿薄膜的晶粒界部分离,即在 MAPbI 晶体的边缘。在纳米尺度上对光电机制的研究表明,通过晶界工程可以对器件性能进行精细调整,这为高性能光电探测器的制造提供了重要的见解。所展示的自供电光电探测器有望在低能耗光电子器件的众多应用中得到应用。