Zhang Tao, Ren Zhiyuan, Guo Siyang, Zhang Guojuan, Wang Shufang, Qiao Shuang
Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China.
ACS Appl Mater Interfaces. 2023 Sep 20;15(37):44444-44455. doi: 10.1021/acsami.3c07585. Epub 2023 Sep 11.
CdS, with a noncentrosymmetric structure, is thought as an important electron transport layer (ETL) in perovskite-based devices, but its pyroelectric effect, which can efficiently modulate the optoelectronic processes, is not well explored. In this work, a MAPbI heterojunction of CdS/MAPbI/Spiro-OMeTAD with a -axis preferred oxygen-doped CdS ETL is developed as a high-performance photodetector (PD). This PD exhibits a stable self-powered property in the spectral range of ∼360-780 nm due to its excellent photovoltaic effect. Moreover, the light-induced pyroelectric potential in the CdS ETL is demonstrated to be an efficient approach for improving the photoresponses, and different effects are observed for different laser irradiations, which can be well understood from their working mechanisms. Upon 450 nm laser irradiation, the photovoltage responsivity () is greatly improved from 596.9 to 6383.6 V/W with an increment of 1069.54%. In addition, the response spectrum is also extended outside the bandgap restriction of the MAPbI to 1550 nm due to both the pyroelectric and photothermoelectric effects, which is a big breakthrough for the perovskite heterojunction PD. Through turning the external bias voltage and ambient temperature, the coupling mechanisms of the pyroelectric and photovoltaic effects are further analyzed. This work provides an important understanding of designing the CdS ETL-based perovskite heterojunction for broadband high-performance photoelectric devices by introducing the pyroelectric effect.
具有非中心对称结构的硫化镉(CdS)被认为是钙钛矿基器件中一种重要的电子传输层(ETL),但其能有效调制光电过程的热释电效应尚未得到充分研究。在这项工作中,开发了一种具有c轴择优取向的氧掺杂CdS电子传输层的CdS/MAPbI/Spiro-OMeTAD的MAPbI异质结作为高性能光电探测器(PD)。由于其优异的光伏效应,该光电探测器在约360 - 780 nm的光谱范围内表现出稳定的自供电特性。此外,CdS电子传输层中的光致热释电势被证明是提高光响应的有效方法,并且对于不同的激光照射观察到了不同的效应,这可以从它们的工作机制中得到很好的理解。在450 nm激光照射下,光电压响应率(Rv)从596.9 V/W大幅提高到6383.6 V/W,增量为1069.54%。此外,由于热释电和光热发电效应,响应光谱也扩展到了MAPbI的带隙限制之外,达到1550 nm,这对于钙钛矿异质结光电探测器来说是一个重大突破。通过改变外部偏置电压和环境温度,进一步分析了热释电和光伏效应的耦合机制。这项工作通过引入热释电效应,为设计基于CdS电子传输层的钙钛矿异质结宽带高性能光电器件提供了重要的认识。