Gao Han, Sun Qiang, Sun Wen, Tan Hark Hoe, Jagadish Chennupati, Zou Jin
Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia.
Nano Lett. 2019 Nov 13;19(11):8262-8269. doi: 10.1021/acs.nanolett.9b03835. Epub 2019 Nov 4.
Understanding the effect of a catalyst on the growth of nanowires is crucial for their controllable synthesis. In this study, we report the growth of InGaP nanowires induced by different-sized Au catalysts by metal-organic chemical vapor deposition. Through electron microscopy characterization, two types of InGaP nanowires are identified, and the difference in catalyst size is shown to cause their different morphological, structural, and compositional characteristics. Furthermore, the influencing mechanism of catalyst size on the formation of hierarchical structures in nanowires is discussed. This study provides an insight for a better understanding of the growth of ternary nanowires, especially the effect of catalyst size, which can be a promising approach to control the ternary nanowire growth, and is therefore beneficial for the design of the corresponding nanowire-based device.
了解催化剂对纳米线生长的影响对于其可控合成至关重要。在本研究中，我们报告了通过金属有机化学气相沉积法，由不同尺寸的金催化剂诱导生长的InGaP纳米线。通过电子显微镜表征，识别出两种类型的InGaP纳米线，并且表明催化剂尺寸的差异导致了它们在形态、结构和成分上的不同特征。此外，还讨论了催化剂尺寸对纳米线中分级结构形成的影响机制。本研究为更好地理解三元纳米线的生长，尤其是催化剂尺寸的影响提供了见解，这可能是控制三元纳米线生长的一种有前景的方法，因此有利于设计相应的基于纳米线的器件。
