Chu Yi, Cui Yugui, Huang Shaoyun, Xing Yingjie, Xu Hongqi
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
Nanomaterials (Basel). 2019 Jul 24;9(8):1062. doi: 10.3390/nano9081062.
SmB nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB nanowires and Ni is the most popular catalyst used to initiate the growth of SmB nanowires. Here, we study the effect of growth mechanism on the surface of SmB nanowires synthesized by CVD. Two types of SmB nanowires are obtained when using Ni as the catalyst. In addition to pure SmB nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.
作为纳米结构拓扑近藤绝缘体的原型，SmB纳米线已展现出与其表面相关的丰富新颖物理现象。催化剂辅助化学气相沉积（CVD）是制备SmB纳米线的常用方法，而Ni是用于引发SmB纳米线生长的最常用催化剂。在此，我们研究生长机制对通过CVD合成的SmB纳米线表面的影响。使用Ni作为催化剂时可获得两种类型的SmB纳米线。除了不含Ni杂质的纯SmB纳米线外，通过透射电子显微镜进行元素分析，在一些SmB纳米线的表面检测到少量Ni。为了消除Ni在纳米线表面可能的分布，我们通过不使用催化剂的CVD合成了单晶SmB纳米线。讨论了催化剂辅助生长机制和无催化剂生长机制之间的差异。
