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用拓扑缺陷解决铋的拓扑分类问题。

Resolving the topological classification of bismuth with topological defects.

机构信息

Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.

Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany.

出版信息

Sci Adv. 2019 Nov 1;5(11):eaax6996. doi: 10.1126/sciadv.aax6996. eCollection 2019 Nov.

Abstract

The growing diversity of topological classes leads to ambiguity between classes that share similar boundary phenomenology. This is the status of bulk bismuth. Recent studies have classified it as either a strong or a higher-order topological insulator, both of which host helical modes on their boundaries. We resolve the topological classification of bismuth by spectroscopically mapping the response of its boundary modes to a screw-dislocation. We find that the one-dimensional mode, on step-edges, extends over a wide energy range and does not open a gap near the screw-dislocations. This signifies that this mode binds to the screw-dislocation, as expected for a material with nonzero weak indices. We argue that the small energy gap, at the time reversal invariant momentum , positions bismuth within the critical region of a topological phase transition between a higher-order topological insulator and a strong topological insulator with nonzero weak indices.

摘要

拓扑类别的不断增加导致具有相似边界现象的类别之间产生歧义。块状铋就是这种情况。最近的研究将其分类为强拓扑或高阶拓扑绝缘体,两者在其边界上都存在螺旋模式。我们通过光谱映射其边界模式对螺旋位错的响应来确定铋的拓扑分类。我们发现,在阶跃边缘的一维模式在很宽的能量范围内延伸,并且在螺旋位错附近不会打开能隙。这表明,正如弱指标不为零的材料所预期的那样,这种模式与螺旋位错结合。我们认为,小能隙,在时间反演不变动量 处,将铋置于高阶拓扑绝缘体和具有非零弱指标的强拓扑绝缘体之间的拓扑相变的临界区域内。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e12/6824853/67e79ef9f0b5/aax6996-F1.jpg

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