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基于并噻吩二酰亚胺寡聚物和二酮吡咯并吡咯共聚物的 n 型薄膜晶体管

Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for n-Type Thin-Film Transistors.

机构信息

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.

Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China.

出版信息

Macromol Rapid Commun. 2019 Dec;40(23):e1900394. doi: 10.1002/marc.201900394. Epub 2019 Nov 8.

Abstract

Diketopyrrolopyrrole (DPP)-based copolymers have received considerable attention as promising semiconducting materials for high-performance organic thin-film transistors (OTFTs). However, these polymers typically exhibit p-type or ambipolar charge-transporting characteristics in OTFTs due to their high-lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP-based n-type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn-DPP show narrow band gaps as low as 1.27 eV and gradually down-shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well-delocalized π-system, and favorable polymer chain packing, the optimal polymer in the series shows promising n-type charge transport with an electron mobility up to 0.48 cm V s in OTFTs, which is among the highest values for the DPP-based n-type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high-performance n-type polymeric semiconductors.

摘要

基于二酮吡咯并吡咯(DPP)的共聚物作为高性能有机薄膜晶体管(OTFT)有前途的半导体材料受到了相当多的关注。然而,由于这些聚合物具有较高的最高占据分子轨道(HOMO)能级,因此它们通常在 OTFT 中表现出 p 型或双极性电荷输运特性。在这项工作中,通过将稠合双噻吩亚胺低聚物(BTIn)引入 DPP 聚合物中,开发了一系列新的基于 DPP 的 n 型聚合物。所得的共聚物 BTIn-DPP 的带隙低至 1.27 eV,随着亚胺基团数量的增加,前沿分子轨道能级逐渐向下移动。得益于共面的主链构象、良好离域的π体系和有利的聚合物链堆积,该系列中最佳的聚合物在 OTFT 中表现出有前途的 n 型电荷输运特性,电子迁移率高达 0.48 cm V s,这是迄今为止报道的基于 DPP 的 n 型聚合物中的最高值之一。结果表明,将稠合双噻吩亚胺低聚物引入聚合物中是构建高性能 n 型聚合物半导体的一种有前途的策略。

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