Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland.
Nanoscale. 2019 Dec 21;11(47):22832-22840. doi: 10.1039/c9nr07854a. Epub 2019 Nov 22.
Lead sulfide (PbS) quantum dots (QDs) are promising materials in solution-processed photovoltaic (PV) devices due to their tunable bandgap and low-cost processing. Replacing the long oleic acid ligands of the as-synthesized QDs with shorter ligands is a key step for making functional QD PVs with correctly tuned band energies and reduced non-radiative recombination centers. In this work, we study the effect of ultraviolet (UV) treatment of PbS QD layers on the QD surface states during ligand exchange. We demonstrate that this straightforward approach effectively reduces the surface trap states and passivates the surface of QDs. We find that UV treatment reduces the density of hydroxyl groups attached to the QD surface and improves the bonding of short ligands to the QD surface. Multiple analyses show the reduction of nonradiative recombination centers for the UV-treated sample. The power conversion efficiency (PCE) of our optimized PbS QD device reached 10.7% (vs. 9% for the control device) and was maintained above 10% after 230 h of constant illumination.
硫化铅 (PbS) 量子点 (QD) 由于其可调带隙和低成本处理,是溶液处理光伏 (PV) 器件中有前途的材料。用较短的配体取代合成 QD 中原有的长油酸配体,是制造具有正确调谐能带能量和减少非辐射复合中心的功能 QD PV 的关键步骤。在这项工作中,我们研究了紫外 (UV) 处理 PbS QD 层在配体交换过程中对 QD 表面态的影响。我们证明,这种简单的方法可以有效地减少表面陷阱态并钝化 QD 的表面。我们发现,UV 处理减少了附着在 QD 表面的羟基的密度,并改善了短配体与 QD 表面的键合。多项分析表明,UV 处理后的样品中非辐射复合中心减少。我们优化的 PbS QD 器件的功率转换效率 (PCE) 达到了 10.7%(对照器件为 9%),并且在 230 小时的持续光照后仍保持在 10%以上。