源自氧化石墨烯的含缺陷石墨烯的室温输运特性
Room-Temperature Transport Properties of Graphene with Defects Derived from Oxo-Graphene.
作者信息
Wang Zhenping, Yao Qirong, Eigler Siegfried
机构信息
Institute for Chemistry and Biochemistry, Freie Universität Berlin, Takustraße 3, 14195, Berlin, Germany.
Physics of Interfaces and Nanomaterial, University of Twente, Enschede, 7500 AE, The Netherlands.
出版信息
Chemistry. 2020 May 20;26(29):6484-6489. doi: 10.1002/chem.201905252. Epub 2020 Feb 3.
In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here, the relation between the density of defects in the range of 0.2 % and 1.5 % and the transport properties is quantitatively studied. Therefore, the related flakes of monolayers of graphene were prepared from oxo-functionalized graphene (oxo-G). The morphologic structure of oxo-G was imaged by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Field-effect mobility values were determined to range between 0.3 cm V s and 33.2 cm V s , which were inversely proportional to the density of defects. These results provide the first quantitative description of the density of defects and transport properties, which plays an important role for potential applications.
近年来，氧化石墨烯被视为用于电子应用的石墨烯的可溶前驱体。然而，由于晶格缺陷，其性能落后于石墨烯。在此，对0.2%至1.5%范围内的缺陷密度与传输特性之间的关系进行了定量研究。因此，从含氧官能化石墨烯（oxo-G）制备了相关的单层石墨烯薄片。通过原子力显微镜（AFM）和扫描隧道显微镜（STM）对oxo-G的形态结构进行了成像。场效应迁移率值测定在0.3 cm² V⁻¹ s⁻¹至33.2 cm² V⁻¹ s⁻¹之间，与缺陷密度成反比。这些结果首次对缺陷密度和传输特性进行了定量描述，这对潜在应用具有重要意义。
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