Schindler Severin, Vollnhals Florian, Halbig Christian E, Marbach Hubertus, Steinrück Hans-Peter, Papp Christian, Eigler Siegfried
Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivägen 10, 41258 Göteborg, Sweden.
Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Egerlandstraße 1, 91058 Erlangen, Germany.
Phys Chem Chem Phys. 2017 Jan 25;19(4):2683-2686. doi: 10.1039/c6cp08070g.
Controlled patterning of graphene is an important task towards device fabrication and thus is the focus of current research activities. Graphene oxide (GO) is a solution-processible precursor of graphene. It can be patterned by thermal processing. However, thermal processing of GO leads to decomposition and CO formation. Alternatively, focused electron beam induced processing (FEBIP) techniques can be used to pattern graphene with high spatial resolution. Based on this approach, we explore FEBIP of GO deposited on SiO. Using oxo-functionalized graphene (oxo-G) with an in-plane lattice defect density of 1% we are able to image the electron beam-induced effects by scanning Raman microscopy for the first time. Depending on electron energy (2-30 keV) and doses (50-800 mC m) either reduction of GO or formation of permanent lattice defects occurs. This result reflects a step towards controlled FEBIP processing of oxo-G.
石墨烯的可控图案化是器件制造的一项重要任务，因此也是当前研究活动的重点。氧化石墨烯（GO）是石墨烯的一种可溶液加工的前驱体。它可以通过热处理进行图案化。然而，GO的热处理会导致分解并形成CO。另外，聚焦电子束诱导加工（FEBIP）技术可用于以高空间分辨率对石墨烯进行图案化。基于此方法，我们探索了沉积在SiO上的GO的FEBIP。使用面内晶格缺陷密度为1%的含氧官能化石墨烯（oxo-G），我们首次能够通过扫描拉曼显微镜对电子束诱导效应进行成像。根据电子能量（2 - 30 keV）和剂量（50 - 800 mC m），要么发生GO的还原，要么形成永久性晶格缺陷。这一结果反映了在oxo-G的可控FEBIP加工方面迈出的一步。
