SiO或h-BN衬底对化学衍生单层石墨烯室温电子输运的影响。
Influence of SiO or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.
作者信息
Wang Zhenping, Yao Qirong, Hu Yalei, Li Chuan, Hußmann Marleen, Weintrub Ben, Kirchhof Jan N, Bolotin Kirill, Taniguchi Takashi, Watanabe Kenji, Eigler Siegfried
机构信息
Institute of Chemistry and Biochemistry, Freie Universität Berlin Takustraße 3 14195 Berlin Germany
Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente P.O. Box 217 7500 AE Enschede The Netherlands.
出版信息
RSC Adv. 2019 Nov 21;9(65):38011-38016. doi: 10.1039/c9ra09197a. eCollection 2019 Nov 19.
The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (G) is studied. Devices composed of monolayer G, partially deposited on SiO and h-BN were used for transport measurements. We find that the G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.
研究了具有约0.5%缺陷密度的石墨烯（G）的电子输运中的衬底效应。由部分沉积在SiO和h-BN上的单层G组成的器件用于输运测量。我们发现，与同一薄片在SiO上的单极p型特性相比，h-BN上的G在环境条件下表现出双极转移行为。虽然石墨烯中的固有缺陷会导致散射，但使用h-BN作为衬底会减少p型掺杂。
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