Kreaunakpan Janjira, Chainok Kittipong, Halcovitch Nathan R, Tiekink Edward R T, Pirojsirikul Teerapong, Saithong Saowanit
Department of Chemistry, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112, Thailand.
Materials and Textile Technology, Faculty of Science and Technology, Thammasat University, Khlong Luang, Pathum Thani, 12121, Thailand.
Acta Crystallogr E Crystallogr Commun. 2020 Jan 1;76(Pt 1):42-47. doi: 10.1107/S2056989019016359.
The complete mol-ecule of the binuclear title complex, bis-[μ-1-1,2,4-triazole-5(4)-thione-κ :]bis-{(thio-cyanato-κ)[1-1,2,4-triazole-5(4)-thione-κ]silver(I)}, [Ag(SCN)(CHNS)], is generated by crystallographic inversion symmetry. The independent triazole-3-thione ligands employ the exocyclic-S atoms exclusively in coordination. One acts as a terminal S-ligand and the other in a bidentate (μ) bridging mode to provide a link between two Ag centres. Each Ag atom is also coordinated by a terminal S-bound thio-cyanate ligand, resulting in a distorted AgS tetra-hedral coordination geometry. An intra-molecular N-H⋯S(thio-cyanate) hydrogen bond is noted. In the crystal, amine-N-H⋯S(thione), N-H⋯N(triazol-yl) and N-H⋯N(thio-cyanate) hydrogen bonds give rise to a three-dimensional architecture. The packing is consolidated by triazolyl-C-H⋯S(thio-cyanate), triazolyl-C-H⋯N(thiocyanate) and S⋯S [3.2463 (9) Å] inter-actions as well as face-to-face π-π stacking between the independent triazolyl rings [inter-centroid separation = 3.4444 (15) Å]. An analysis of the calculated Hirshfeld surfaces shows the three major contributors are due to N⋯H/H⋯N, S⋯H/H⋯S and C⋯H/H⋯C contacts, at 35.8, 19.4 and 12.7%, respectively; H⋯H contacts contribute only 7.6% to the overall surface.
双核标题配合物双-[μ-1,2,4-三唑-5(4)-硫酮-κ:S]双-{(硫氰酸根-κ:N)[1,2,4-三唑-5(4)-硫酮-κ:S]银(I)},[Ag(SCN)(C₂H₂N₃S)]的完整分子由晶体学倒转对称性产生。独立的三唑-3-硫酮配体仅在外环-S原子处参与配位。一个作为末端S-配体,另一个以双齿(μ)桥连模式在两个Ag中心之间提供连接。每个Ag原子还由一个末端S键合的硫氰酸根配体配位,形成扭曲的AgS四面体配位几何结构。注意到分子内存在N-H⋯S(硫氰酸根)氢键。在晶体中,胺-N-H⋯S(硫酮)、N-H⋯N(三唑基)和N-H⋯N(硫氰酸根)氢键形成三维结构。堆积通过三唑基-C-H⋯S(硫氰酸根)、三唑基-C-H⋯N(硫氰酸根)和S⋯S [3.2463 (9) Å]相互作用以及独立三唑基环之间的面对面π-π堆积[质心间距 = 3.4444 (15) Å]得到巩固。对计算得到的Hirshfeld表面的分析表明,三个主要贡献者分别是N⋯H/H⋯N、S⋯H/H⋯S和C⋯H/H⋯C接触,分别占35.8%、19.4%和12.7%;H⋯H接触对总表面的贡献仅为7.6%。