Mikhalitsyna Evgeniya A, Kataev Vasiliy A, Larrañaga Aitor, Lepalovskij Vladimir N, Kurlyandskaya Galina V
Department of Solid State Magnetism IPAM, Ural Federal University, Mira st. 19, 620002 Ekaterinburg, Russia.
SGIKER, Servicios Generales de Investigación, Universidad del País Vasco UPV-EHU, Apartado 644, 48080 Bilbao, Spain.
Materials (Basel). 2020 Jan 12;13(2):348. doi: 10.3390/ma13020348.
A growing variety of microelectronic devices and magnetic field sensors as well as a trend of miniaturization demands the development of low-dimensional magnetic materials and nanostructures. Among them, soft magnetic thin films of Finemet alloys are appropriate materials for sensor and actuator devices. Therefore, one of the important directions of the research is the optimization of thin film magnetic properties. In this study, the structural transformations of the FeNbCuSiB and FeNbMoCuSiB films of 100, 150 and 200 nm thicknesses were comparatively analyzed together with their magnetic properties and magnetic anisotropy. The thin films were prepared using the ion-plasma sputtering technique. The crystallization process was studied by certified X-ray diffraction (XRD) methods. The kinetics of crystallization was observed due to the temperature X-ray diffraction (TDX) analysis. Magnetic properties of the films were studied by the magneto-optical Kerr microscopy. Based on the TDX data the delay of the onset crystallization of the films with its thickness decreasing was shown. Furthermore, the onset crystallization of the 150 and 200 nm films began at the temperature of about 400-420 °C showing rapid grain growth up to the size of 16-20 nm. The best magnetic properties of the films were formed after crystallization after the heat treatment at 350-400 °C when the stress relaxation took place.
越来越多的微电子设备和磁场传感器以及小型化趋势要求开发低维磁性材料和纳米结构。其中,铁磁微晶合金软磁薄膜是传感器和执行器设备的合适材料。因此,研究的一个重要方向是优化薄膜的磁性能。在本研究中,对厚度为100、150和200nm的FeNbCuSiB和FeNbMoCuSiB薄膜的结构转变及其磁性能和磁各向异性进行了比较分析。薄膜采用离子等离子体溅射技术制备。通过认证的X射线衍射(XRD)方法研究了结晶过程。通过温度X射线衍射(TDX)分析观察到了结晶动力学。通过磁光克尔显微镜研究了薄膜的磁性能。基于TDX数据,表明随着薄膜厚度的减小,起始结晶延迟。此外,150和200nm薄膜的起始结晶在约400-420°C的温度下开始,显示出快速的晶粒生长,直至尺寸达到16-20nm。当应力松弛发生时,在350-400°C热处理结晶后,薄膜形成了最佳磁性能。