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通过优化电输运性能实现共掺杂p型多晶SnSe的高热电性能

High Thermoelectric Performance of Co-Doped P-Type Polycrystalline SnSe via Optimizing Electrical Transport Properties.

作者信息

Li Chengjun, Wu Hong, Zhang Bin, Zhu Huaxing, Fan Yijing, Lu Xu, Sun Xiaonan, Zhang Xiao, Wang Guoyu, Zhou Xiaoyuan

机构信息

Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics , Chongqing University , Chongqing 400044 , P. R. China.

Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science , Chongqing 400714 , P. R. China.

出版信息

ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8446-8455. doi: 10.1021/acsami.9b20610. Epub 2020 Feb 5.

DOI:10.1021/acsami.9b20610
PMID:31986003
Abstract

This work systematically investigated the thermoelectric properties of p-type Na and M (M = K, Li, Ag) codoped polycrystalline SnSe. It is found that the electrical properties of polycrystalline SnSe can be improved significantly for (Na, Ag) codoped samples, contributed by the enhanced carrier concentration. Specifically, a carrier concentration of 6.23 × 10 cm was obtained in SnNaAgSe sample at 335 K, an increase of 18% compared with that of the Na single-doped sample (5.22 × 10 cm). The power factor reached ∼0.73 mW m K for the SnNaAgSe sample at 785 K, enhanced by ∼26% compared with Na single-doped one. In addition, Sn-rich and Ag-rich particles/areas observed in the matrix of SnNaAgSe contribute to the reduction of lattice thermal conductivity from 0.61 W m K for SnAgSe to 0.47 W m K at 785 K. The combination of simultaneously enhanced power factor and depressed thermal conductivity leads to a maximum ≈ 1.2 at 785 K and a high average ≈ 0.74 at 335-785 K for SnNaAgSe, and generating a high theoretical conversion efficiency of ∼11%. These illuminating discoveries could provide routes to enhance the thermoelectric performance in p-type polycrystalline SnSe.

摘要

本工作系统研究了p型Na与M(M = K、Li、Ag)共掺杂多晶SnSe的热电性能。研究发现,对于(Na,Ag)共掺杂样品,多晶SnSe的电学性能可得到显著改善,这得益于载流子浓度的提高。具体而言,在335 K时,SnNaAgSe样品的载流子浓度达到6.23×10 cm,与Na单掺杂样品(5.22×10 cm)相比增加了18%。在785 K时,SnNaAgSe样品的功率因子达到约0.73 mW m K,比Na单掺杂样品提高了约26%。此外,在SnNaAgSe基体中观察到的富Sn和富Ag颗粒/区域有助于将晶格热导率从SnAgSe的0.61 W m K降低到785 K时的0.47 W m K。功率因子的同时提高和热导率的降低相结合,使得SnNaAgSe在785 K时的最大ZT≈1.2,在335 - 785 K时的平均ZT≈0.74较高,并产生了约11%的高理论转换效率。这些有启发性的发现可为提高p型多晶SnSe的热电性能提供途径。

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