Fang Zheng, Xu Zhilong, Jang Tao, Zhou Fei, Huang Shixiang
College of Mechanical and Energy Engineering, Jimei University, Xiamen 361021, China.
Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China.
Materials (Basel). 2020 Jan 24;13(3):564. doi: 10.3390/ma13030564.
To quantitatively characterize the pyramidal texture of monocrystalline silicon cells and to optimize the parameters of the texturing process, the relative standard deviation was proposed to quantitatively characterize the uniformity of the pyramidal texture. Referring to the definition and calculation of the standard deviation in mathematical statistics, was defined as the standard deviation of the pyramid relative height h after normalization of the pyramid height H of monocrystalline silicon wafer surfaces. Six different silicon cells, with different pyramidal textures, were obtained by applying different texturing times. The relationships between and the photoelectric characteristics were analyzed. The feasibility of quantitatively characterizing the uniformity of the pyramidal texture using was verified. By fitting the curve, the feasibility of optimizing the texturing process parameters and predicting the photoelectric characteristics using was verified. The experimental and analytical results indicate that, when the relative standard deviation was smaller, the uniformity of the pyramidal texture obtained by texturing was better. The photoelectric conversion efficiency (PCE) of the silicon cells monotonically increased with decreasing . The silicon cell obtained by texturing with 2% tetramethylammonium hydroxide (TMAH) solution for 18.1 min had a textured surface with a minimum of , the reflectivity of the silicon cell reached its minimum value of 2.28%, and the PCE reached its maximum value of 19.76%.
为了定量表征单晶硅电池的金字塔纹理并优化纹理化工艺参数，提出了相对标准偏差来定量表征金字塔纹理的均匀性。参照数理统计中标准偏差的定义和计算方法，将其定义为单晶硅片表面金字塔高度(H)归一化后金字塔相对高度(h)的标准偏差。通过施加不同的纹理化时间，获得了六种具有不同金字塔纹理的不同硅电池。分析了相对标准偏差与光电特性之间的关系。验证了使用相对标准偏差定量表征金字塔纹理均匀性的可行性。通过拟合相对标准偏差曲线，验证了使用其优化纹理化工艺参数和预测光电特性的可行性。实验和分析结果表明，当相对标准偏差较小时，通过纹理化获得的金字塔纹理的均匀性更好。硅电池的光电转换效率（PCE）随着相对标准偏差的减小而单调增加。用2%的四甲基氢氧化铵（TMAH）溶液纹理化18.1分钟得到的硅电池，其纹理化表面的相对标准偏差最小，硅电池的反射率达到最小值2.28%，光电转换效率达到最大值19.76%。
