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生长技术对三元半导体化合物微观结构的影响。

Effects of growth technique on the microstructure of ternary semiconductor compound.

作者信息

Mobarak M, Zied M A, Mostafa Massaud, Ashari M

机构信息

Physics Department, College of Science, Jouf University, P.O. Box: 2014, Sakaka, Saudi Arabia.

Physics Department, Faculty of Science, South Valley University, Qena 83523, Egypt.

出版信息

Heliyon. 2020 Jan 21;6(1):e03196. doi: 10.1016/j.heliyon.2020.e03196. eCollection 2020 Jan.

DOI:10.1016/j.heliyon.2020.e03196
PMID:31993518
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6974771/
Abstract

X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate the lattice parameters, grain sizes, and microstrains of the two grown samples. For a crystal grown by the vertical Bridgeman method, the vacancy serves as an acceptor, resulting in p-type conduction, whereas the vacancy expected to serve as a donor, occurring in n-type conduction for the crystal grown via the traveling heater technique. The concentration of crystal grown via the VBM is determined to be p-type, whereas the concentration of that grown via the THM is n-type. Concerning crystal, the determined crystallite sizes obtained to be 165 and 182 nm for the VBM and THM, respectively.

摘要

分别采用X射线衍射(XRD)和能量色散X射线荧光光谱仪(EDXRF)来研究通过布里奇曼技术和移动加热器法生长的块状样品的微观结构。我们研究了这两种生长样品的晶格参数、晶粒尺寸和微观应变。对于通过垂直布里奇曼法生长的晶体,空位作为受主,导致p型导电,而对于通过移动加热器技术生长的晶体,预期空位作为施主,发生n型导电。通过VBM生长的晶体浓度被确定为p型,而通过THM生长的晶体浓度为n型。关于晶体,对于VBM和THM,确定的微晶尺寸分别为165和182纳米。

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本文引用的文献

1
Growth and anisotropy of transport properties of single crystals.单晶的生长及输运性质的各向异性
Heliyon. 2018 Nov 21;4(11):e00952. doi: 10.1016/j.heliyon.2018.e00952. eCollection 2018 Nov.